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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQD20N06LTF
FQD20N06LTF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQD20N06LTF - onsemi

Manifakti Nimewo Pati
FQD20N06LTF
Manifakti
onsemi
Allelco Nimewo Pati
32D-FQD20N06LTF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 17.2A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
FQD20N06LTF.pdf
Nan stok: 4050

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FQD20N06LTF Tech
onsemi - FQD20N06LTF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FQD20N06LTF

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252AA  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 60mOhm @ 8.6A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 38W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 630 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 13 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 17.2A (Tc)  
Nimewo pwodwi baz FQD2  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FQD20N06LTF.

Pwodwi atribi FQD20N06LTF FQD20N06TF FQD20N06TM FQD20N06TM
Nimewo Pati FQD20N06LTF FQD20N06TF FQD20N06TM FQD20N06TM
Manifakti onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Founisè Aparèy pake TO-252AA TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 17.2A (Tc) 16.8A (Tc) 16.8A (Tc) 16.8A (Tc)
Dissipasyon pouvwa (Max) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 38W (Tc)
Vgs (Max) ±20V ±25V ±25V ±25V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz FQD2 - - FQD20N06
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Pòtay Charge (Qg) (Max) @ Vgs 13 nC @ 5 V 15 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V
Pakèt Tape & Reel (TR) Bulk Bulk Tape & Reel (TR)
Vgs (th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V, 10V 10V 10V 10V
Seri QFET® QFET® QFET® QFET®
Drenaj Sous Voltage (Vdss) 60 V 60 V 60 V 60 V
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 630 pF @ 25 V 590 pF @ 25 V 590 pF @ 25 V 590 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 60mOhm @ 8.6A, 10V 63mOhm @ 8.4A, 10V 63mOhm @ 8.4A, 10V 63mOhm @ 8.4A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

FQD20N06LTF fich PDF

Download FQD20N06LTF PDF fich ak dokiman onsemi pou FQD20N06LTF - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf

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onsemi
32D-FQD20N06LTF

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