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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQD2P40TM
FQD2P40TM Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQD2P40TM - onsemi

Manifakti Nimewo Pati
FQD2P40TM
Manifakti
onsemi
Allelco Nimewo Pati
32D-FQD2P40TM
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 400V 1.56A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
FQD2P40.pdf
RoHs Status
Nan stok: 62380

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FQD2P40TM Tech
onsemi - FQD2P40TM espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FQD2P40TM

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252AA  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 6.5Ohm @ 780mA, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 38W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 13 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 400 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.56A (Tc)  
Nimewo pwodwi baz FQD2P40  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FQD2P40TM.

Pwodwi atribi FQD2P40TM FQD2P40TF FQD2N90TF FQD30N06LTM
Nimewo Pati FQD2P40TM FQD2P40TF FQD2N90TF FQD30N06LTM
Manifakti onsemi Fairchild Semiconductor onsemi onsemi
Rds Sou (Max) @ Id, Vgs 6.5Ohm @ 780mA, 10V 6.5Ohm @ 780mA, 10V 7.2Ohm @ 850mA, 10V 39mOhm @ 12A, 10V
Seri QFET® QFET® QFET® QFET®
Kouran - Kontini Drain (Id) @ 25 ° C 1.56A (Tc) 1.56A (Tc) 1.7A (Tc) 24A (Tc)
Drenaj Sous Voltage (Vdss) 400 V 400 V 900 V 60 V
Fèt tip P-Channel P-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 25 V 350 pF @ 25 V 500 pF @ 25 V 1040 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max) ±30V ±30V ±30V ±20V
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V 15 nC @ 10 V 20 nC @ 5 V
Nimewo pwodwi baz FQD2P40 - FQD2 FQD3
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 5V, 10V
Founisè Aparèy pake TO-252AA TO-252, (D-Pak) TO-252AA TO-252AA
Vgs (th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 2.5V @ 250µA
Dissipasyon pouvwa (Max) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 44W (Tc)

FQD2P40TM fich PDF

Download FQD2P40TM PDF fich ak dokiman onsemi pou FQD2P40TM - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Postponed Qualification 27/Dec/2022.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Tape and Box/Reel Barcode Update 07/Aug/2014.pdf
Asanble PCN/orijin
Assembly Change 28/May/2023.pdf
Fich
FQD2P40.pdf

Shipment

Tan livrezon

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Pri livrezon

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Metòd livrezon

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    +00852 9146 4856

Sètifikasyon & Manm

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FQD2P40TM Image

FQD2P40TM

onsemi
32D-FQD2P40TM

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