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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQD6N50CTM
FQD6N50CTM Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQD6N50CTM - onsemi

Manifakti Nimewo Pati
FQD6N50CTM
Manifakti
onsemi
Allelco Nimewo Pati
32D-FQD6N50CTM
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 500V 4.5A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
FQD6N50C.pdf
RoHs Status
Nan stok: 4860

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FQD6N50CTM Tech
onsemi - FQD6N50CTM espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FQD6N50CTM

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252AA  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 2.25A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 61W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 700 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A (Tc)  
Nimewo pwodwi baz FQD6N50  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FQD6N50CTM.

Pwodwi atribi FQD6N50CTM FQD6P25TF FQD6N40CTM FQD6N40TM
Nimewo Pati FQD6N50CTM FQD6P25TF FQD6N40CTM FQD6N40TM
Manifakti onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor
Nimewo pwodwi baz FQD6N50 - FQD6N40 -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Bulk
Founisè Aparèy pake TO-252AA TO-252, (D-Pak) TO-252AA TO-252, (D-Pak)
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 2.25A, 10V 1.1Ohm @ 2.35A, 10V 1Ohm @ 2.25A, 10V 1.15Ohm @ 2.1A, 10V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Dissipasyon pouvwa (Max) 2.5W (Ta), 61W (Tc) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 48W (Tc) 2.5W (Ta), 50W (Tc)
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 700 pF @ 25 V 780 pF @ 25 V 625 pF @ 25 V 620 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A (Tc) 4.7A (Tc) 4.5A (Tc) 4.2A (Tc)
Vgs (Max) ±30V ±30V ±30V ±30V
Seri QFET® QFET® QFET® QFET®
Drenaj Sous Voltage (Vdss) 500 V 250 V 400 V 400 V
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 27 nC @ 10 V 20 nC @ 10 V 17 nC @ 10 V
Fèt tip N-Channel P-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA

FQD6N50CTM fich PDF

Download FQD6N50CTM PDF fich ak dokiman onsemi pou FQD6N50CTM - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Passivation Material 14/May/2008.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Tape and Box/Reel Barcode Update 07/Aug/2014.pdf
PCN obsolescence/ eol
Mult Dev EOL 23/Dec/2021.pdf
Asanble PCN/orijin
Wafer Fab 28/Jul/2021.pdf
Fich
FQD6N50C.pdf

Shipment

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FQD6N50CTM

onsemi
32D-FQD6N50CTM

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