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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFS350A
IRFS350A Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFS350A - onsemi

Manifakti Nimewo Pati
IRFS350A
Manifakti
onsemi
Allelco Nimewo Pati
32D-IRFS350A
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 400V 11.5A TO3PF
Deskripsyon detaye
Pake
TO-3P-3 Full Pack
Done fèy
IRFS350A.pdf
Nan stok: 3930

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Espesifikasyon

Espesifikasyon IRFS350A Tech
onsemi - IRFS350A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - IRFS350A

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-3PF  
Seri -  
Rds Sou (Max) @ Id, Vgs 300mOhm @ 5.75A, 10V  
Dissipasyon pouvwa (Max) 92W (Tc)  
Pake / Ka TO-3P-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2780 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 131 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 400 V  
Kouran - Kontini Drain (Id) @ 25 ° C 11.5A (Tc)  
Nimewo pwodwi baz IRFS3  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi IRFS350A.

Pwodwi atribi IRFS350A IRFS350A IRFS3607PBF IRFS33N15DPBF
Nimewo Pati IRFS350A IRFS350A IRFS3607PBF IRFS33N15DPBF
Manifakti onsemi Fairchild Semiconductor International Rectifier Infineon Technologies
Pake / Ka TO-3P-3 Full Pack TO-3P-3 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds Sou (Max) @ Id, Vgs 300mOhm @ 5.75A, 10V 300mOhm @ 5.75A, 10V 9mOhm @ 46A, 10V 56mOhm @ 20A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 92W (Tc) 92W (Tc) 140W (Tc) 3.8W (Ta), 170W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 2780 pF @ 25 V 2780 pF @ 25 V 3070 pF @ 50 V 2020 pF @ 25 V
Seri - - HEXFET® HEXFET®
Pòtay Charge (Qg) (Max) @ Vgs 131 nC @ 10 V 131 nC @ 10 V 84 nC @ 10 V 90 nC @ 10 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 11.5A (Tc) 11.5A (Tc) 80A (Tc) 33A (Tc)
Vgs (Max) ±30V ±30V ±20V ±30V
Nimewo pwodwi baz IRFS3 - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 100µA 5.5V @ 250µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
FET Feature - - - -
Pakèt Tube Tube Bulk Tube
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Founisè Aparèy pake TO-3PF TO-3PF D2PAK D2PAK
Drenaj Sous Voltage (Vdss) 400 V 400 V 75 V 150 V

IRFS350A fich PDF

Download IRFS350A PDF fich ak dokiman onsemi pou IRFS350A - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
Fich
IRFS350A.pdf

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IRFS350A Image

IRFS350A

onsemi
32D-IRFS350A

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