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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLS640A
IRLS640A Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLS640A - onsemi

Manifakti Nimewo Pati
IRLS640A
Manifakti
onsemi
Allelco Nimewo Pati
32D-IRLS640A
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 9.8A TO220F
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
IRLS640A.pdf
RoHs Status
Nan stok: 38210

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRLS640A Tech
onsemi - IRLS640A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - IRLS640A

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220F-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 180mOhm @ 4.9A, 5V  
Dissipasyon pouvwa (Max) 40W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1705 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.8A (Tc)  
Nimewo pwodwi baz IRLS640  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi IRLS640A.

Pwodwi atribi IRLS640A IRLTS6342TRPBF IRLTS2242TRPBF IRLS510A
Nimewo Pati IRLS640A IRLTS6342TRPBF IRLTS2242TRPBF IRLS510A
Manifakti onsemi Infineon Technologies Infineon Technologies onsemi
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-220-3 Full Pack SOT-23-6 SOT-23-6 TO-220-3 Full Pack
Kouran - Kontini Drain (Id) @ 25 ° C 9.8A (Tc) 8.3A (Ta) 6.9A (Ta) 4.5A (Tc)
Dissipasyon pouvwa (Max) 40W (Tc) 2W (Ta) 2W (Ta) 23W (Tc)
Mounting Kalite Through Hole Surface Mount Surface Mount Through Hole
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tube
Seri - HEXFET® HEXFET® -
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 5 V 11 nC @ 4.5 V 12 nC @ 4.5 V 8 nC @ 5 V
Nimewo pwodwi baz IRLS640 IRLTS6342 IRLTS2242 IRLS51
Founisè Aparèy pake TO-220F-3 6-TSOP 6-TSOP TO-220F-3
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs (th) (Max) @ Id 2V @ 250µA 1.1V @ 10µA 1.1V @ 10µA 2V @ 250µA
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V 2.5V, 4.5V 2.5V, 4.5V 5V
Fèt tip N-Channel N-Channel P-Channel N-Channel
Vgs (Max) ±20V ±12V ±12V ±20V
Drenaj Sous Voltage (Vdss) 200 V 30 V 20 V 100 V
Kapasite Antre (Ciss) (Max) @ Vds 1705 pF @ 25 V 1010 pF @ 25 V 905 pF @ 10 V 235 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 180mOhm @ 4.9A, 5V 17.5mOhm @ 8.3A, 4.5V 32mOhm @ 6.9A, 4.5V 440mOhm @ 2.25A, 5V

IRLS640A fich PDF

Download IRLS640A PDF fich ak dokiman onsemi pou IRLS640A - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Tape and Box/Reel Barcode Update 07/Aug/2014.pdf
PCN obsolescence/ eol
Mult Dev EOL 30/Jun/2022.pdf
Fich
IRLS640A.pdf

Shipment

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Sètifikasyon & Manm

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IRLS640A Image

IRLS640A

onsemi
32D-IRLS640A

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