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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - Bipolè (BJT) - SingleMJ11033G
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MJ11033G - onsemi

Manifakti Nimewo Pati
MJ11033G
Manifakti
onsemi
Allelco Nimewo Pati
32D-MJ11033G
ECAD modèl
Pati Deskripsyon
TRANS PNP DARL 120V 50A TO204
Deskripsyon detaye
Pake
TO-204AE
Done fèy
MJ11028,29,30,32,33.pdf
RoHs Status
Nan stok: 5343

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon MJ11033G Tech
onsemi - MJ11033G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - MJ11033G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Voltage - Pèseptè Emitter pann (Max) 120 V  
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A  
Transistor Tip PNP - Darlington  
Founisè Aparèy pake TO-204 (TO-3)  
Seri -  
Pouvwa - Max 300 W  
Pake / Ka TO-204AE  
Pwodwi atribi Valè atribi  
Pakèt Tray  
Operating Tanperati -55°C ~ 200°C (TJ)  
Mounting Kalite Through Hole  
Frekans - Tranzisyon -  
DC aktyèl DC (HFE) (Min) @ Ic, Vce 1000 @ 25A, 5V  
Kouran - Koupe Cutè (Max) 2mA  
Kouran - Pèseptè (Ic) (Max) 50 A  
Nimewo pwodwi baz MJ11033  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi MJ11033G.

Pwodwi atribi MJ11033G MJ11028 MJ11032 MJ11032G
Nimewo Pati MJ11033G MJ11028 MJ11032 MJ11032G
Manifakti onsemi NTE Electronics, Inc NTE Electronics, Inc onsemi
Founisè Aparèy pake TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3)
Frekans - Tranzisyon - - - -
Operating Tanperati -55°C ~ 200°C (TJ) - -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
DC aktyèl DC (HFE) (Min) @ Ic, Vce 1000 @ 25A, 5V 1000 @ 25A, 5V 1000 @ 25A, 5V 1000 @ 25A, 5V
Kouran - Pèseptè (Ic) (Max) 50 A 50 A 50 A 50 A
Pake / Ka TO-204AE TO-204AE TO-204AE TO-204AE
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Voltage - Pèseptè Emitter pann (Max) 120 V 60 V 120 V 120 V
Kouran - Koupe Cutè (Max) 2mA 2mA 2mA 2mA
Seri - - - -
Nimewo pwodwi baz MJ11033 - - MJ11032
Pouvwa - Max 300 W 300 W 300 W 300 W
Transistor Tip PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A 2.5V @ 250mA, 25A 3.5V @ 500mA, 50A 3.5V @ 500mA, 50A
Pakèt Tray Bag Bag Tray

MJ11033G fich PDF

Download MJ11033G PDF fich ak dokiman onsemi pou MJ11033G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
Fich
MJ11028,29,30,32,33.pdf

Shipment

Tan livrezon

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Sètifikasyon & Manm

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onsemi

MJ11033G

onsemi
32D-MJ11033G

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