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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNTD4805N-1G
NTD4805N-1G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NTD4805N-1G - onsemi

Manifakti Nimewo Pati
NTD4805N-1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTD4805N-1G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 12.7A/95A IPAK
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
NTD4805N, NVD4805N.pdf
Nan stok: 4640

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NTD4805N-1G Tech
onsemi - NTD4805N-1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTD4805N-1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake I-PAK  
Seri -  
Rds Sou (Max) @ Id, Vgs 5mOhm @ 30A, 10V  
Dissipasyon pouvwa (Max) 1.41W (Ta), 79W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2865 pF @ 12 V  
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 11.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 11.5V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12.7A (Ta), 95A (Tc)  
Nimewo pwodwi baz NTD48  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTD4805N-1G.

Pwodwi atribi NTD4805N-1G NTD4804N-35G NTD4804NT4G NTD4806N-35G
Nimewo Pati NTD4805N-1G NTD4804N-35G NTD4804NT4G NTD4806N-35G
Manifakti onsemi onsemi onsemi onsemi
Dissipasyon pouvwa (Max) 1.41W (Ta), 79W (Tc) 1.43W (Ta), 107W (Tc) 1.43W (Ta), 107W (Tc) 1.4W (Ta), 68W (Tc)
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Stub Leads, IPak
Seri - - - -
Mounting Kalite Through Hole Through Hole Surface Mount Through Hole
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Kouran - Kontini Drain (Id) @ 25 ° C 12.7A (Ta), 95A (Tc) 14.5A (Ta), 124A (Tc) 14.5A (Ta), 124A (Tc) 11.3A (Ta), 79A (Tc)
Founisè Aparèy pake I-PAK I-Pak DPAK I-Pak
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 11.5 V 40 nC @ 4.5 V 40 nC @ 4.5 V 23 nC @ 4.5 V
Pakèt Tube Tube Tape & Reel (TR) Tube
Rds Sou (Max) @ Id, Vgs 5mOhm @ 30A, 10V 4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 6mOhm @ 30A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 2865 pF @ 12 V 4490 pF @ 12 V 4490 pF @ 12 V 2142 pF @ 12 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Nimewo pwodwi baz NTD48 NTD48 NTD4804 NTD48
Vgs (Max) ±20V ±20V ±20V ±20V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V

NTD4805N-1G fich PDF

Download NTD4805N-1G PDF fich ak dokiman onsemi pou NTD4805N-1G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN obsolescence/ eol
Multiple Devices 27/Jun/2014.pdf
Fich
NTD4805N, NVD4805N.pdf

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NTD4805N-1G Image

NTD4805N-1G

onsemi
32D-NTD4805N-1G

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