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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNTGS3136PT1G
NTGS3136PT1G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

NTGS3136PT1G - onsemi

Manifakti Nimewo Pati
NTGS3136PT1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTGS3136PT1G
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 3.7A 6TSOP
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
NTGS3136P.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 105190

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon NTGS3136PT1G Tech
onsemi - NTGS3136PT1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTGS3136PT1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-TSOP  
Seri -  
Rds Sou (Max) @ Id, Vgs 33mOhm @ 5.1A, 4.5V  
Dissipasyon pouvwa (Max) 700mW (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1901 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A (Ta)  
Nimewo pwodwi baz NTGS3136  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTGS3136PT1G.

Pwodwi atribi NTGS3136PT1G NTGS3441PT1G NTGS3441BT1G NTGS3441T1G
Nimewo Pati NTGS3136PT1G NTGS3441PT1G NTGS3441BT1G NTGS3441T1G
Manifakti onsemi onsemi onsemi onsemi
Dissipasyon pouvwa (Max) 700mW (Ta) 510mW (Ta) 700mW (Ta) 500mW (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V 6 nC @ 4.5 V 9 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) ±8V ±12V ±8V ±8V
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A (Ta) 1.8A (Ta) 2.2A (Ta) 1.65A (Ta)
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip P-Channel P-Channel P-Channel P-Channel
Rds Sou (Max) @ Id, Vgs 33mOhm @ 5.1A, 4.5V 110mOhm @ 3A, 4.5V 90mOhm @ 3A, 4.5V 90mOhm @ 3.3A, 4.5V
Seri - - - -
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Kapasite Antre (Ciss) (Max) @ Vds 1901 pF @ 10 V 345 pF @ 15 V 630 pF @ 10 V 480 pF @ 5 V
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 20 V
Nimewo pwodwi baz NTGS3136 NTGS34 NTGS34 NTGS3441
Vgs (th) (Max) @ Id 1V @ 250µA 1.6V @ 250µA 900mV @ 250µA 1.5V @ 250µA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -

NTGS3136PT1G fich PDF

Download NTGS3136PT1G PDF fich ak dokiman onsemi pou NTGS3136PT1G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN anbalaj
Covering Tape/Material Chg 20/May/2016.pdf
PCN obsolescence/ eol
Multiple Devices Update 28/Jun/2011.pdf
Fich
NTGS3136P.pdf

Shipment

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NTGS3136PT1G Image

NTGS3136PT1G

onsemi
32D-NTGS3136PT1G

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