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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNTHD4P02FT1G
NTHD4P02FT1G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NTHD4P02FT1G - onsemi

Manifakti Nimewo Pati
NTHD4P02FT1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTHD4P02FT1G
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 2.2A CHIPFET
Deskripsyon detaye
Pake
8-SMD, Flat Lead
Done fèy
NTHD4P02FT1G.pdf
RoHs Status
Nan stok: 64290

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NTHD4P02FT1G Tech
onsemi - NTHD4P02FT1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTHD4P02FT1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 1.2V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ChipFET™  
Seri -  
Rds Sou (Max) @ Id, Vgs 155mOhm @ 2.2A, 4.5V  
Dissipasyon pouvwa (Max) 1.1W (Tj)  
Pake / Ka 8-SMD, Flat Lead  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 300 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature Schottky Diode (Isolated)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tj)  
Nimewo pwodwi baz NTHD4  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTHD4P02FT1G.

Pwodwi atribi NTHD4P02FT1G NTHD5904NT1G NTHD5904NT1 NTHD4P02FT1
Nimewo Pati NTHD4P02FT1G NTHD5904NT1G NTHD5904NT1 NTHD4P02FT1
Manifakti onsemi onsemi onsemi onsemi
Seri - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Fèt tip P-Channel N-Channel N-Channel -
Vgs (th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Dissipasyon pouvwa (Max) 1.1W (Tj) 640mW (Ta) 640mW (Ta) -
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V -
FET Feature Schottky Diode (Isolated) - - -
Vgs (Max) ±12V ±8V ±8V -
Founisè Aparèy pake ChipFET™ ChipFET™ ChipFET™ -
Rds Sou (Max) @ Id, Vgs 155mOhm @ 2.2A, 4.5V 65mOhm @ 3.3A, 4.5V 65mOhm @ 3.3A, 4.5V -
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tj) 2.5A (Ta) 2.5A (Ta) -
Kapasite Antre (Ciss) (Max) @ Vds 300 pF @ 10 V 465 pF @ 16 V 465 pF @ 16 V -
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V -
Nimewo pwodwi baz NTHD4 NTHD59 NTHD59 NTHD4P
Pòtay Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 6 nC @ 4.5 V 6 nC @ 4.5 V -
Pake / Ka 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk

NTHD4P02FT1G fich PDF

Download NTHD4P02FT1G PDF fich ak dokiman onsemi pou NTHD4P02FT1G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN obsolescence/ eol
Obsolete Notice 15/Dec/2022.pdf

Shipment

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onsemi
32D-NTHD4P02FT1G

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