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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayNTMD4840NR2G
NTMD4840NR2G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

NTMD4840NR2G - onsemi

Manifakti Nimewo Pati
NTMD4840NR2G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTMD4840NR2G
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 4.5A 8SOIC
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
NTMD4840N.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 5160

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon NTMD4840NR2G Tech
onsemi - NTMD4840NR2G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTMD4840NR2G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 3V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri -  
Rds Sou (Max) @ Id, Vgs 24mOhm @ 6.9A, 10V  
Pouvwa - Max 680mW  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 520pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 9.5nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz NTMD4840  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTMD4840NR2G.

Pwodwi atribi NTMD4840NR2G NTMD4N03R2G NTMD4820NR2G NTMD5836NLR2G
Nimewo Pati NTMD4840NR2G NTMD4N03R2G NTMD4820NR2G NTMD5836NLR2G
Manifakti onsemi onsemi onsemi onsemi
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Pouvwa - Max 680mW 2W 750mW 1.5W
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A 4A 4.9A 9A, 5.7A
Rds Sou (Max) @ Id, Vgs 24mOhm @ 6.9A, 10V 60mOhm @ 4A, 10V 20mOhm @ 7.5A, 10V 12mOhm @ 10A, 10V
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz NTMD4840 NTMD4 NTMD4820 NTMD58
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 9.5nC @ 10V 16nC @ 10V 7.7nC @ 4.5V 50nC @ 10V
Kapasite Antre (Ciss) (Max) @ Vds 520pF @ 15V 400pF @ 20V 940pF @ 15V 2120pF @ 20V
Drenaj Sous Voltage (Vdss) 30V 30V 30V 40V
Seri - - - -

NTMD4840NR2G fich PDF

Download NTMD4840NR2G PDF fich ak dokiman onsemi pou NTMD4840NR2G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN anbalaj
Mult MSL1 Pkg Chg 20/Dec/2018.pdf
PCN obsolescence/ eol
Mult Dev EOL 01/Oct/2021.pdf
PCN konsepsyon/spesifikasyon
NTMS48xxNR2G Copper Wire 29/Aug/2008.pdf
Fich
NTMD4840N.pdf

Shipment

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Sètifikasyon & Manm

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NTMD4840NR2G Image

NTMD4840NR2G

onsemi
32D-NTMD4840NR2G

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