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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNTMFS4C08NAT1G
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

NTMFS4C08NAT1G - onsemi

Manifakti Nimewo Pati
NTMFS4C08NAT1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTMFS4C08NAT1G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 16.4A/52A 5DFN
Pake
8-PowerTDFN, 5 Leads
Done fèy
NTMFS4C08NAT1G.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 45340

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon NTMFS4C08NAT1G Tech
onsemi - NTMFS4C08NAT1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTMFS4C08NAT1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2.1V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 5-DFN (5x6) (8-SOFL)  
Seri -  
Rds Sou (Max) @ Id, Vgs 5.8mOhm @ 18A, 10V  
Dissipasyon pouvwa (Max) 2.51W (Ta), 25.5W (Tc)  
Pake / Ka 8-PowerTDFN, 5 Leads  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1670 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16.4A (Ta), 52A (Tc)  
Nimewo pwodwi baz NTMFS4  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTMFS4C08NAT1G.

Pwodwi atribi NTMFS4C08NAT1G NTMFS4C05NAT1G NTMFS4C06NT1G NTMFS4C03NT1G
Nimewo Pati NTMFS4C08NAT1G NTMFS4C05NAT1G NTMFS4C06NT1G NTMFS4C03NT1G
Manifakti onsemi onsemi onsemi onsemi
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (th) (Max) @ Id 2.1V @ 250µA 2.2V @ 250µA 2.1V @ 250µA 2.2V @ 250µA
Pake / Ka 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Founisè Aparèy pake 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Vgs (Max) ±20V ±20V ±20V ±20V
Nimewo pwodwi baz NTMFS4 NTMFS4 NTMFS4 NTMFS4
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Dissipasyon pouvwa (Max) 2.51W (Ta), 25.5W (Tc) 2.57W (Ta), 33W (Tc) 770mW (Ta), 30.5W (Tc) 3.1W (Ta), 64W (Tc)
Rds Sou (Max) @ Id, Vgs 5.8mOhm @ 18A, 10V 3.4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 2.1mOhm @ 30A, 10V
Seri - - - -
Pòtay Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V 30 nC @ 10 V 26 nC @ 10 V 45.2 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 16.4A (Ta), 52A (Tc) 21.7A (Ta), 78A (Tc) 11A (Ta), 69A (Tc) 30A (Ta), 136A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 1670 pF @ 15 V 1972 pF @ 15 V 1683 pF @ 15 V 3071 pF @ 15 V
FET Feature - - - -

NTMFS4C08NAT1G fich PDF

Download NTMFS4C08NAT1G PDF fich ak dokiman onsemi pou NTMFS4C08NAT1G - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
Asanble PCN/orijin
Wafer Fab Change 17/Oct/2022.pdf

Shipment

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