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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNTMS4800NR2G
NTMS4800NR2G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NTMS4800NR2G - onsemi

Manifakti Nimewo Pati
NTMS4800NR2G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTMS4800NR2G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 4.9A 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
NTMS4800N.pdf
Nan stok: 5360

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NTMS4800NR2G Tech
onsemi - NTMS4800NR2G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTMS4800NR2G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri -  
Rds Sou (Max) @ Id, Vgs 20mOhm @ 7.5A, 10V  
Dissipasyon pouvwa (Max) 750mW (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 940 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.9A (Ta)  
Nimewo pwodwi baz NTMS48  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTMS4800NR2G.

Pwodwi atribi NTMS4800NR2G NTMS4840NR2G NTMS4503NR2G NTMS4807NR2G
Nimewo Pati NTMS4800NR2G NTMS4840NR2G NTMS4503NR2G NTMS4807NR2G
Manifakti onsemi onsemi onsemi onsemi
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Seri - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 30 V 30 V 28 V 30 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V 9.5 nC @ 10 V 23 nC @ 4.5 V 24 nC @ 4.5 V
Nimewo pwodwi baz NTMS48 NTMS48 NTMS45 NTMS4807
Kapasite Antre (Ciss) (Max) @ Vds 940 pF @ 25 V 520 pF @ 15 V 2400 pF @ 16 V 2900 pF @ 24 V
Rds Sou (Max) @ Id, Vgs 20mOhm @ 7.5A, 10V 24mOhm @ 6.9A, 10V 8mOhm @ 14A, 10V 6.1mOhm @ 14.8A, 10V
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Kouran - Kontini Drain (Id) @ 25 ° C 4.9A (Ta) 4.5A (Ta) 9A (Ta) 9.1A (Ta)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Dissipasyon pouvwa (Max) 750mW (Ta) 680mW (Ta) 930mW (Ta) 860mW (Ta)

NTMS4800NR2G fich PDF

Download NTMS4800NR2G PDF fich ak dokiman onsemi pou NTMS4800NR2G - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
Fich
NTMS4800N.pdf

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NTMS4800NR2G Image

NTMS4800NR2G

onsemi
32D-NTMS4800NR2G

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