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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNTR2101PT1
NTR2101PT1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

NTR2101PT1 - onsemi

Manifakti Nimewo Pati
NTR2101PT1
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTR2101PT1
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 8V 3.7A SOT23-3
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
NTR2101P.pdf
Sètifikasyon nou an
Nan stok: 5490

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon NTR2101PT1 Tech
onsemi - NTR2101PT1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTR2101PT1

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23-3 (TO-236)  
Seri -  
Rds Sou (Max) @ Id, Vgs 52mOhm @ 3.5A, 4.5V  
Dissipasyon pouvwa (Max) 960mW (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1173 pF @ 4 V  
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 8 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A (Ta)  
Nimewo pwodwi baz NTR210  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status RoHS ki pa konfòme
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTR2101PT1.

Pwodwi atribi NTR2101PT1 NTR1P02T1 NTR1P02LT1G NTR1P02LT3G
Nimewo Pati NTR2101PT1 NTR1P02T1 NTR1P02LT1G NTR1P02LT3G
Manifakti onsemi onsemi onsemi onsemi
Kapasite Antre (Ciss) (Max) @ Vds 1173 pF @ 4 V 165 pF @ 5 V 225 pF @ 5 V 225 pF @ 5 V
Rds Sou (Max) @ Id, Vgs 52mOhm @ 3.5A, 4.5V 180mOhm @ 1.5A, 10V 220mOhm @ 750mA, 4.5V 220mOhm @ 750mA, 4.5V
Founisè Aparèy pake SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 4.5V, 10V 2.5V, 4.5V 2.5V, 4.5V
FET Feature - - - -
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Dissipasyon pouvwa (Max) 960mW (Ta) 400mW (Ta) 400mW (Ta) 400mW (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 2.5 nC @ 5 V 5.5 nC @ 4 V 5.5 nC @ 4 V
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A (Ta) 1A (Ta) 1.3A (Ta) 1.3A (Ta)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 8 V 20 V 20 V 20 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz NTR210 NTR1P0 NTR1P02 NTR1P02
Vgs (Max) ±8V ±20V ±12V ±12V
Seri - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Fèt tip P-Channel P-Channel P-Channel P-Channel
Vgs (th) (Max) @ Id 1V @ 250µA 2.3V @ 250µA 1.25V @ 250µA 1.25V @ 250µA

NTR2101PT1 fich PDF

Download NTR2101PT1 PDF fich ak dokiman onsemi pou NTR2101PT1 - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN obsolescence/ eol
Multiple Devices 03/Jan/2008.pdf
PCN konsepsyon/spesifikasyon
Copper Wire 26/May/2009.pdf
Fich
NTR2101P.pdf

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NTR2101PT1 Image

NTR2101PT1

onsemi
32D-NTR2101PT1

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