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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNVMFD6H852NLT1G
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NVMFD6H852NLT1G - onsemi

Manifakti Nimewo Pati
NVMFD6H852NLT1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NVMFD6H852NLT1G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 80V 7A/25A 8DFN DL
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
NVMFD6H852NL.pdf
RoHs Status
Nan stok: 40890

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NVMFD6H852NLT1G Tech
onsemi - NVMFD6H852NLT1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NVMFD6H852NLT1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2V @ 26µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-DFN (5x6) Dual Flag (SO8FL-Dual)  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 25.5mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 3.2W (Ta), 38W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 521 pF @ 40 V  
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 10 V  
Fèt tip N-Channel  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta), 25A (Tc)  
Nimewo pwodwi baz NVMFD6  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NVMFD6H852NLT1G.

Pwodwi atribi NVMFD6H852NLT1G NVMFS025P04M8LT1G NVMFS015N10MCLT1G NVMFS014P04M8LT1G
Nimewo Pati NVMFD6H852NLT1G NVMFS025P04M8LT1G NVMFS015N10MCLT1G NVMFS014P04M8LT1G
Manifakti onsemi onsemi onsemi onsemi
Founisè Aparèy pake 8-DFN (5x6) Dual Flag (SO8FL-Dual) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Dissipasyon pouvwa (Max) 3.2W (Ta), 38W (Tc) 3.5W (Ta), 44.1W (Tc) 3W (Ta), 79W (Tc) 3.6W (Ta), 60W (Tc)
Drenaj Sous Voltage (Vdss) 80 V 40 V 100 V 40 V
Rds Sou (Max) @ Id, Vgs 25.5mOhm @ 10A, 10V 23mOhm @ 15A, 10V 12.2mOhm @ 14A, 10V 13.8mOhm @ 15A, 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 16.3 nC @ 10 V 19 nC @ 10 V 26.5 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 521 pF @ 40 V 1058 pF @ 20 V 1338 pF @ 50 V 1734 pF @ 20 V
Pake / Ka 8-PowerTDFN 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Fèt tip N-Channel P-Channel N-Channel P-Channel
Vgs (th) (Max) @ Id 2V @ 26µA 2.4V @ 255µA 2.2V @ 282µA 2.4V @ 420µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101
Nimewo pwodwi baz NVMFD6 - NVMFS015 -
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta), 25A (Tc) 9.4A (Ta), 34.6A (Tc) 10.5A (Ta), 54A (Tc) 12.5A (Ta), 52.1A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

NVMFD6H852NLT1G fich PDF

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Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
Fich
NVMFD6H852NL.pdf

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