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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNVMYS8D0N04CTWG
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NVMYS8D0N04CTWG - onsemi

Manifakti Nimewo Pati
NVMYS8D0N04CTWG
Manifakti
onsemi
Allelco Nimewo Pati
32D-NVMYS8D0N04CTWG
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 16A/49A 4LFPAK
Deskripsyon detaye
Pake
SOT-1023, 4-LFPAK
Done fèy
NVMYS8D0N04C.pdf
RoHs Status
Nan stok: 60050

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NVMYS8D0N04CTWG Tech
onsemi - NVMYS8D0N04CTWG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NVMYS8D0N04CTWG

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 3.5V @ 30µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake LFPAK4 (5x6)  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 8.1mOhm @ 15A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 38W (Tc)  
Pake / Ka SOT-1023, 4-LFPAK  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 625 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 49A (Tc)  
Nimewo pwodwi baz NVMYS8  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NVMYS8D0N04CTWG.

Pwodwi atribi NVMYS8D0N04CTWG NVMS4816NR2G NVMS5P02R2G NVMFSC0D9N04CL
Nimewo Pati NVMYS8D0N04CTWG NVMS4816NR2G NVMS5P02R2G NVMFSC0D9N04CL
Manifakti onsemi onsemi onsemi onsemi
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -55°C ~ 175°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - - 10V
Dissipasyon pouvwa (Max) 3.8W (Ta), 38W (Tc) - - 4.1W (Ta), 166W (Tc)
Founisè Aparèy pake LFPAK4 (5x6) 8-SOIC 8-SOIC 8-DFN (5x6.15)
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 9.2 nC @ 4.5 V 35 nC @ 4.5 V 86 nC @ 10 V
Vgs (th) (Max) @ Id 3.5V @ 30µA 3V @ 250µA 1.25V @ 250µA 3.5V @ 250µA
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 40 V 30 V 20 V 40 V
Vgs (Max) ±20V - - ±20V
Nimewo pwodwi baz NVMYS8 NVMS48 NVMS5P02 NVMFSC0
Pake / Ka SOT-1023, 4-LFPAK 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-PowerVDFN
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101
Kapasite Antre (Ciss) (Max) @ Vds 625 pF @ 25 V 1060 pF @ 25 V 1900 pF @ 16 V 6100 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 49A (Tc) 6.8A (Ta) 3.95A (Ta) 50A (Ta), 316A (Tc)
Rds Sou (Max) @ Id, Vgs 8.1mOhm @ 15A, 10V 10mOhm @ 9A, 10V 33mOhm @ 5.4A, 4.5V 0.87mOhm @ 50A, 10V
Fèt tip N-Channel N-Channel P-Channel N-Channel

NVMYS8D0N04CTWG fich PDF

Download NVMYS8D0N04CTWG PDF fich ak dokiman onsemi pou NVMYS8D0N04CTWG - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
Fich
NVMYS8D0N04C.pdf

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