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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNVTFS5116PLTWG
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NVTFS5116PLTWG - onsemi

Manifakti Nimewo Pati
NVTFS5116PLTWG
Manifakti
onsemi
Allelco Nimewo Pati
32D-NVTFS5116PLTWG
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 60V 6A 8WDFN
Deskripsyon detaye
Pake
8-PowerWDFN
Done fèy
NVTFS5116PL.pdf
RoHs Status
Nan stok: 97850

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NVTFS5116PLTWG Tech
onsemi - NVTFS5116PLTWG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NVTFS5116PLTWG

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-WDFN (3.3x3.3)  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 52mOhm @ 7A, 10V  
Dissipasyon pouvwa (Max) 3.2W (Ta), 21W (Tc)  
Pake / Ka 8-PowerWDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1258 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 6A (Ta)  
Nimewo pwodwi baz NVTFS5116  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NVTFS5116PLTWG.

Pwodwi atribi NVTFS5116PLTWG NVTFS5124PLTWG NVTFS4C13NWFTAG NVTFS4C25NWFTAG
Nimewo Pati NVTFS5116PLTWG NVTFS5124PLTWG NVTFS4C13NWFTAG NVTFS4C25NWFTAG
Manifakti onsemi onsemi onsemi onsemi
Fèt tip P-Channel P-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 6A (Ta) 2.4A (Ta) 14A (Ta) 10.1A (Ta), 22.1A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 1258 pF @ 25 V 250 pF @ 25 V 770 pF @ 15 V 500 pF @ 15 V
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Dissipasyon pouvwa (Max) 3.2W (Ta), 21W (Tc) 3W (Ta), 18W (Tc) 3W (Ta), 26W (Tc) 3W (Ta), 14.3W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 6 nC @ 10 V 15.2 nC @ 10 V 10.3 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz NVTFS5116 NVTFS5124 NVTFS4 NVTFS4
Drenaj Sous Voltage (Vdss) 60 V 60 V 30 V 30 V
Vgs (Max) ±20V ±20V ±20V ±20V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Pake / Ka 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 52mOhm @ 7A, 10V 260mOhm @ 3A, 10V 9.4mOhm @ 30A, 10V 17mOhm @ 10A, 10V
Vgs (th) (Max) @ Id 3V @ 250µA 2.5V @ 250µA 2.1V @ 250µA 2.2V @ 250µA
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

NVTFS5116PLTWG fich PDF

Download NVTFS5116PLTWG PDF fich ak dokiman onsemi pou NVTFS5116PLTWG - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
Asanble PCN/orijin
Wafer Process 30/Sep/2022.pdf
Fich
NVTFS5116PL.pdf

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onsemi
32D-NVTFS5116PLTWG

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