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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayNVTJD4001NT1G
NVTJD4001NT1G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NVTJD4001NT1G - onsemi

Manifakti Nimewo Pati
NVTJD4001NT1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NVTJD4001NT1G
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 0.25A SC-88
Deskripsyon detaye
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
N(V)TJD4001N.pdf
RoHs Status
Nan stok: 281340

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NVTJD4001NT1G Tech
onsemi - NVTJD4001NT1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NVTJD4001NT1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 1.5V @ 100µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-88/SC70-6/SOT-363  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V  
Pouvwa - Max 272mW  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 33pF @ 5V  
Pòtay Charge (Qg) (Max) @ Vgs 1.3nC @ 5V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 250mA  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz NVTJD4001  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NVTJD4001NT1G.

Pwodwi atribi NVTJD4001NT1G NVTFS6H880NLWFTAG NVTFWS9D6P04M8LTAG NVTR01P02LT1G MOS
Nimewo Pati NVTJD4001NT1G NVTFS6H880NLWFTAG NVTFWS9D6P04M8LTAG NVTR01P02LT1G MOS
Manifakti onsemi ONsemi onsemi AMI Semiconductor/onsemi
Konfigirasyon 2 N-Channel (Dual) - - -
Seri Automotive, AEC-Q101 - Automotive, AEC-Q101 -
Vgs (th) (Max) @ Id 1.5V @ 100µA - 2.4V @ 580µA -
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V - 9.5mOhm @ 20A, 10V -
Kapasite Antre (Ciss) (Max) @ Vds 33pF @ 5V - 2312 pF @ 20 V -
Drenaj Sous Voltage (Vdss) 30V - 40 V -
Pòtay Charge (Qg) (Max) @ Vgs 1.3nC @ 5V - 34.6 nC @ 10 V -
Pouvwa - Max 272mW - - -
Nimewo pwodwi baz NVTJD4001 - NVTFWS9 -
Mounting Kalite Surface Mount - Surface Mount -
Teknoloji MOSFET (Metal Oxide) - MOSFET (Metal Oxide) -
Operating Tanperati -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ) -
Kouran - Kontini Drain (Id) @ 25 ° C 250mA - 13A (Ta), 64A (Tc) -
Pakèt Tape & Reel (TR) - Tape & Reel (TR) -
Founisè Aparèy pake SC-88/SC70-6/SOT-363 - 8-WDFN (3.3x3.3) -
Pake / Ka 6-TSSOP, SC-88, SOT-363 - 8-PowerWDFN -

NVTJD4001NT1G fich PDF

Download NVTJD4001NT1G PDF fich ak dokiman onsemi pou NVTJD4001NT1G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Green Compound Update 04/Mar/2015.pdf
Fich
N(V)TJD4001N.pdf
PCN obsolescence/ eol
FPCN FET 9-29-22.pdf

Shipment

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Sètifikasyon & Manm

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onsemi
32D-NVTJD4001NT1G

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