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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleSGH10N60RUFDTU
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SGH10N60RUFDTU - onsemi

Manifakti Nimewo Pati
SGH10N60RUFDTU
Manifakti
onsemi
Allelco Nimewo Pati
32D-SGH10N60RUFDTU
ECAD modèl
Pati Deskripsyon
IGBT 600V 16A 75W TO3P
Pake
TO-3P-3, SC-65-3
Done fèy
SGH10N60RUFD.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 5180

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SGH10N60RUFDTU Tech
onsemi - SGH10N60RUFDTU espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - SGH10N60RUFDTU

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.8V @ 15V, 10A  
Kondisyon tès 300V, 10A, 20Ohm, 15V  
Td (sou / sou) @ 25 ° C 15ns/36ns  
Oblije chanje enèji 141µJ (on), 215µJ (off)  
Founisè Aparèy pake TO-3PN  
Seri -  
Tan rekiperasyon ranvèse (trr) 60 ns  
Pouvwa - Max 75 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-3P-3, SC-65-3  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 30 nC  
Kouran - Pèseptè Pulsed (Icm) 30 A  
Kouran - Pèseptè (Ic) (Max) 16 A  
Nimewo pwodwi baz SGH10N60  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) Not Applicable
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi SGH10N60RUFDTU.

Pwodwi atribi SGH10N60RUFDTU SGH40N60UFTU SGH20N60RUFDTU SGH40N60UFTU
Nimewo Pati SGH10N60RUFDTU SGH40N60UFTU SGH20N60RUFDTU SGH40N60UFTU
Manifakti onsemi Fairchild Semiconductor onsemi onsemi
Pake / Ka TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Pouvwa - Max 75 W 160 W 195 W 160 W
Nimewo pwodwi baz SGH10N60 SGH40N60 SGH20N SGH40N60
Gate Charge 30 nC 97 nC 55 nC 97 nC
IGBT Kalite - - - -
Td (sou / sou) @ 25 ° C 15ns/36ns 15ns/65ns 30ns/48ns 15ns/65ns
Vce (sou) (Max) @ Vge, Ic 2.8V @ 15V, 10A 2.6V @ 15V, 20A 2.8V @ 15V, 20A 2.6V @ 15V, 20A
Kouran - Pèseptè (Ic) (Max) 16 A 40 A 32 A 40 A
Seri - - - -
Kouran - Pèseptè Pulsed (Icm) 30 A 160 A 60 A 160 A
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kondisyon tès 300V, 10A, 20Ohm, 15V 300V, 20A, 10Ohm, 15V 300V, 20A, 10Ohm, 15V 300V, 20A, 10Ohm, 15V
Tan rekiperasyon ranvèse (trr) 60 ns - 95 ns -
Oblije chanje enèji 141µJ (on), 215µJ (off) 160µJ (on), 200µJ (off) 524µJ (on), 473µJ (off) 160µJ (on), 200µJ (off)
Pakèt Tube Bulk Tube Tube
Kalite Antre Standard Standard Standard Standard
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake TO-3PN TO-3P TO-3P TO-3P
Voltage - Pèseptè Emitter pann (Max) 600 V 600 V 600 V 600 V

SGH10N60RUFDTU fich PDF

Download SGH10N60RUFDTU PDF fich ak dokiman onsemi pou SGH10N60RUFDTU - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Dimension/Color Change 24/Feb/2021.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Packing quantity increase 28/Dec/2020.pdf
Asanble PCN/orijin
Mold compound change 17/Sep/2019.pdf
Fich
SGH10N60RUFD.pdf
PCN obsolescence/ eol
Mult Dev EOL 30/Sep/2022.pdf

Shipment

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SGH10N60RUFDTU

onsemi
32D-SGH10N60RUFDTU

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