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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayFDG6332C-F085
FDG6332C-F085 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDG6332C-F085 - onsemi

Manifakti Nimewo Pati
FDG6332C-F085
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDG6332C-F085
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 20V SC70-6
Deskripsyon detaye
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
FDG6332C-F085.pdf
RoHs Status
Nan stok: 4970

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDG6332C-F085 Tech
onsemi - FDG6332C-F085 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDG6332C-F085

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-88 (SC-70-6)  
Seri Automotive, AEC-Q101, PowerTrench®  
Rds Sou (Max) @ Id, Vgs 300mOhm @ 700mA, 4.5V  
Pouvwa - Max 300mW  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 113pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 700mA, 600mA  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz FDG6332  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDG6332C-F085.

Pwodwi atribi FDG6332C-F085 FDG8842CZ FDG6332C FDG6335N
Nimewo Pati FDG6332C-F085 FDG8842CZ FDG6332C FDG6335N
Manifakti onsemi onsemi onsemi onsemi
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 700mA, 600mA 750mA, 410mA 700mA, 600mA 700mA
Seri Automotive, AEC-Q101, PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Konfigirasyon N and P-Channel N and P-Channel N and P-Channel 2 N-Channel (Dual)
Pake / Ka 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Rds Sou (Max) @ Id, Vgs 300mOhm @ 700mA, 4.5V 400mOhm @ 750mA, 4.5V 300mOhm @ 700mA, 4.5V 300mOhm @ 700mA, 4.5V
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Founisè Aparèy pake SC-88 (SC-70-6) SC-88 (SC-70-6) SC-88 (SC-70-6) SC-88 (SC-70-6)
Vgs (th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 113pF @ 10V 120pF @ 10V 113pF @ 10V 113pF @ 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pouvwa - Max 300mW 300mW 300mW 300mW
Nimewo pwodwi baz FDG6332 FDG8842 FDG6332 FDG6335
Pòtay Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V 1.44nC @ 4.5V 1.5nC @ 4.5V 1.4nC @ 4.5V
Drenaj Sous Voltage (Vdss) 20V 30V, 25V 20V 20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

FDG6332C-F085 fich PDF

Download FDG6332C-F085 PDF fich ak dokiman onsemi pou FDG6332C-F085 - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Binary Year Code Marking 15/Jan/2014.pdf
PCN obsolescence/ eol
Mult Dev LTB Ext 13/Jan/2022.pdf
Nimewo pati PCN
Mult Device Part Number Chg 30/May/2017.pdf
PCN konsepsyon/spesifikasyon
Marking Lay-out Implementation 07/Oct/2022.pdf Marking Lay-out Implementation 15/Nov/2021.pdf
Asanble PCN/orijin
Cancellation 09/Sep/2020.pdf
Fich
FDG6332C-F085.pdf

Shipment

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FDG6332C-F085 Image

FDG6332C-F085

onsemi
32D-FDG6332C-F085

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