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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAOB412L
Alpha & Omega Semiconductor Inc.
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

AOB412L - Alpha & Omega Semiconductor Inc.

Manifakti Nimewo Pati
AOB412L
Manifakti
Alpha and Omega Semiconductor, Inc.
Allelco Nimewo Pati
32D-AOB412L
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 8.2A/60A TO263
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
AOB412L.pdf
Nan stok: 4040

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon AOB412L Tech
Alpha & Omega Semiconductor Inc. - AOB412L espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Alpha & Omega Semiconductor Inc. - AOB412L

Pwodwi atribi Valè atribi  
Manifakti Alpha and Omega Semiconductor, Inc.  
Vgs (th) (Max) @ Id 3.8V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-263 (D2Pak)  
Seri SDMOS™  
Rds Sou (Max) @ Id, Vgs 15.5mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 2.6W (Ta), 150W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3220 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 54 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 7V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 8.2A (Ta), 60A (Tc)  
Nimewo pwodwi baz AOB412  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Alpha & Omega Semiconductor Inc. AOB412L.

Pwodwi atribi AOB412L AOB411L AOB416 AOB409L
Nimewo Pati AOB412L AOB411L AOB416 AOB409L
Manifakti Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Pòtay Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 100 nC @ 10 V 24 nC @ 10 V 52 nC @ 10 V
Vgs (th) (Max) @ Id 3.8V @ 250µA 2.5V @ 250µA 4V @ 250µA 2.4V @ 250µA
Dissipasyon pouvwa (Max) 2.6W (Ta), 150W (Tc) 2.1W (Ta), 187W (Tc) 2.5W (Ta), 150W (Tc) 2.1W (Ta), 83.3W (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Seri SDMOS™ - SDMOS™ -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 7V, 10V 4.5V, 10V 7V, 10V 4.5V, 10V
Drenaj Sous Voltage (Vdss) 100 V 60 V 100 V 60 V
Vgs (Max) ±25V ±20V ±25V ±20V
Fèt tip N-Channel P-Channel N-Channel P-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 8.2A (Ta), 60A (Tc) 8A (Ta), 78A (Tc) 6.2A (Ta), 45A (Tc) 5A (Ta), 31.5A (Tc)
Founisè Aparèy pake TO-263 (D2Pak) TO-263 (D2Pak) TO-263 (D2Pak) TO-263 (D2Pak)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Rds Sou (Max) @ Id, Vgs 15.5mOhm @ 20A, 10V 16.5mOhm @ 20A, 10V 36mOhm @ 20A, 10V 38mOhm @ 20A, 10V
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 3220 pF @ 50 V 6400 pF @ 30 V 1450 pF @ 50 V 2953 pF @ 30 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Nimewo pwodwi baz AOB412 AOB411 AOB41 AOB409

AOB412L fich PDF

Download AOB412L PDF fich ak dokiman Alpha & Omega Semiconductor Inc. pou AOB412L - Alpha & Omega Semiconductor Inc..

Lòt dokiman ki gen rapò
AOS Green Policy.pdf
Enfòmasyon sou anviwònman an
Alpha & Omega REACH.pdf Alpha & Omega RoHS.pdf
PCN obsolescence/ eol
Mult Dev EOL - LTS Rev 31/Oct/2017.pdf Mult Dev EOL 23/Jan/2017.pdf

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Sètifikasyon & Manm

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Alpha & Omega Semiconductor Inc.

AOB412L

Alpha & Omega Semiconductor Inc.
32D-AOB412L

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