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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - Array2N7002DW L6327
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

2N7002DW L6327 - Infineon Technologies

Manifakti Nimewo Pati
2N7002DW L6327
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-2N7002DW L6327
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 60V 0.3A SOT363
Deskripsyon detaye
Pake
6-VSSOP, SC-88, SOT-363
Done fèy
2N7002DW L6327.pdf
Nan stok: 5120

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon 2N7002DW L6327 Tech
Infineon Technologies - 2N7002DW L6327 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - 2N7002DW L6327

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-SOT363-PO  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 3Ohm @ 500mA, 10V  
Pouvwa - Max 500mW  
Pake / Ka 6-VSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 20pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 0.6nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 60V  
Kouran - Kontini Drain (Id) @ 25 ° C 300mA  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz 2N7002  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies 2N7002DW L6327.

Pwodwi atribi 2N7002DW L6327 2N7002DW-7-G 2N7002DW 2N7002DW-7-F
Nimewo Pati 2N7002DW L6327 2N7002DW-7-G 2N7002DW 2N7002DW-7-F
Manifakti Infineon Technologies Diodes Incorporated Yangjie Technology Diodes Incorporated
Konfigirasyon 2 N-Channel (Dual) - 2 N-Channel (Dual) 2 N-Channel (Dual)
Seri OptiMOS™ * - -
Pouvwa - Max 500mW - 300mW 310mW
Vgs (th) (Max) @ Id 2.5V @ 250µA - 2.5V @ 250µA 2V @ 250µA
Operating Tanperati -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pake / Ka 6-VSSOP, SC-88, SOT-363 - 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Kouran - Kontini Drain (Id) @ 25 ° C 300mA - 340mA 230mA
Nimewo pwodwi baz 2N7002 2N7002 2N7002 2N7002
Pòtay Charge (Qg) (Max) @ Vgs 0.6nC @ 10V - - -
Kapasite Antre (Ciss) (Max) @ Vds 20pF @ 25V - 50pF @ 25V 50pF @ 25V
Drenaj Sous Voltage (Vdss) 60V - 60V 60V
Founisè Aparèy pake PG-SOT363-PO - SOT-363 SOT-363
Mounting Kalite Surface Mount - Surface Mount Surface Mount
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
FET Feature Logic Level Gate - - -
Teknoloji MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 3Ohm @ 500mA, 10V - 2.5Ohm @ 300mA, 10V 7.5Ohm @ 50mA, 5V

2N7002DW L6327 fich PDF

Download 2N7002DW L6327 PDF fich ak dokiman Infineon Technologies pou 2N7002DW L6327 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN obsolescence/ eol
Multiple Devices 30/Nov/2011.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

2N7002DW L6327

Infineon Technologies
32D-2N7002DW L6327

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