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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAUIRF7478QTR
AUIRF7478QTR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

AUIRF7478QTR - Infineon Technologies

Manifakti Nimewo Pati
AUIRF7478QTR
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-AUIRF7478QTR
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 7A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
AUIRF7478Q.pdf
RoHs Status
Nan stok: 4830

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Kantite

Espesifikasyon

Espesifikasyon AUIRF7478QTR Tech
Infineon Technologies - AUIRF7478QTR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - AUIRF7478QTR

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 26mOhm @ 4.2A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1740 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies AUIRF7478QTR.

Pwodwi atribi AUIRF7478QTR AUIRF7484QTR AUIRF7416QTR AUIRF7665S2TR
Nimewo Pati AUIRF7478QTR AUIRF7484QTR AUIRF7416QTR AUIRF7665S2TR
Manifakti Infineon Technologies International Rectifier Infineon Technologies International Rectifier
Vgs (th) (Max) @ Id 3V @ 250µA 2V @ 250µA 2.04V @ 250µA 5V @ 25µA
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta) 14A (Ta) 10A (Ta) 4.1A (Ta), 14.4A (Tc)
Rds Sou (Max) @ Id, Vgs 26mOhm @ 4.2A, 10V 10mOhm @ 14A, 7V 20mOhm @ 5.6A, 10V 62mOhm @ 8.9A, 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Bulk
Fèt tip N-Channel N-Channel P-Channel N-Channel
Drenaj Sous Voltage (Vdss) 60 V 40 V 30 V 100 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 1740 pF @ 25 V 3520 pF @ 25 V 1700 pF @ 25 V 515 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±8V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 7V 4.5V, 10V 10V
Founisè Aparèy pake 8-SO 8-SO 8-SO DIRECTFET SB
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V 100 nC @ 7 V 92 nC @ 10 V 13 nC @ 10 V
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.4W (Ta), 30W (Tc)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) DirectFET™ Isometric SB

AUIRF7478QTR fich PDF

Download AUIRF7478QTR PDF fich ak dokiman Infineon Technologies pou AUIRF7478QTR - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Lot Chgs 25/May/2021.pdf Die Attach Material Chg 30/Oct/2015.pdf
PCN obsolescence/ eol
Mult Dev EOL 31/Jul/2019.pdf
Fich
AUIRF7478Q.pdf

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Infineon Technologies
32D-AUIRF7478QTR

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