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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAUIRFSL8405
International Rectifier
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

AUIRFSL8405 - International Rectifier

Manifakti Nimewo Pati
AUIRFSL8405
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-AUIRFSL8405
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 120A TO262
Deskripsyon detaye
Pake
TO-262-3 Long Leads, I²Pak, TO-262AA
Done fèy
AUIRFSL8405.pdf
Nan stok: 3910

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon AUIRFSL8405 Tech
International Rectifier - AUIRFSL8405 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak International Rectifier - AUIRFSL8405

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.9V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-262  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V  
Dissipasyon pouvwa (Max) 163W (Tc)  
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 5193 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 161 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou International Rectifier AUIRFSL8405.

Pwodwi atribi AUIRFSL8405 AUIRFU4104 AUIRFS8409-7P AUIRFS8409TRL
Nimewo Pati AUIRFSL8405 AUIRFU4104 AUIRFS8409-7P AUIRFS8409TRL
Manifakti International Rectifier International Rectifier Infineon Technologies Infineon Technologies
Pòtay Charge (Qg) (Max) @ Vgs 161 nC @ 10 V 89 nC @ 10 V 460 nC @ 10 V 450 nC @ 10 V
Pakèt Bulk Bulk Tube Tape & Reel (TR)
Founisè Aparèy pake TO-262 PG-TO-251-3-21 D2PAK (7-Lead) PG-TO263-3
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA TO-251-3 Short Leads, IPak, TO-251AA TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kapasite Antre (Ciss) (Max) @ Vds 5193 pF @ 25 V 2950 pF @ 25 V 13975 pF @ 25 V 14240 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V 5.5mOhm @ 42A, 10V 0.75mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 163W (Tc) 140W (Tc) 375W (Tc) 375W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - 10V 10V
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc) 42A (Tc) 240A (Tc) 195A (Tc)
Seri HEXFET® Automotive, AEC-Q101, HEXFET® HEXFET® HEXFET®
Vgs (th) (Max) @ Id 3.9V @ 100µA 4V @ 250µA 3.9V @ 250µA 3.9V @ 250µA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 40 V

Shipment

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Sètifikasyon & Manm

Wè plis
International Rectifier

AUIRFSL8405

International Rectifier
32D-AUIRFSL8405

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