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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSC057N08NS3GATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSC057N08NS3GATMA1 - Infineon Technologies

Manifakti Nimewo Pati
BSC057N08NS3GATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSC057N08NS3GATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 80V 16A/100A TDSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
BSC057N08NS3GATMA1.pdf
RoHs Status
Nan stok: 41697

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Kantite

Espesifikasyon

Espesifikasyon BSC057N08NS3GATMA1 Tech
Infineon Technologies - BSC057N08NS3GATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSC057N08NS3GATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 73µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TDSON-8-5  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 5.7mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 114W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3900 pF @ 40 V  
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 100A (Tc)  
Nimewo pwodwi baz BSC057  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSC057N08NS3GATMA1.

Pwodwi atribi BSC057N08NS3GATMA1 BSC054N04NSGATMA1 BSC059N04LS6 BSC0588NSI MOS
Nimewo Pati BSC057N08NS3GATMA1 BSC054N04NSGATMA1 BSC059N04LS6 BSC0588NSI MOS
Manifakti Infineon Technologies Infineon Technologies Cypress Semiconductor (Infineon Technologies) Cypress Semiconductor (Infineon Technologies)
Rds Sou (Max) @ Id, Vgs 5.7mOhm @ 50A, 10V 5.4mOhm @ 50A, 10V - -
Dissipasyon pouvwa (Max) 2.5W (Ta), 114W (Tc) 2.5W (Ta), 57W (Tc) - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Vgs (th) (Max) @ Id 3.5V @ 73µA 4V @ 27µA - -
Vgs (Max) ±20V ±20V - -
Kapasite Antre (Ciss) (Max) @ Vds 3900 pF @ 40 V 2800 pF @ 20 V - -
Mounting Kalite Surface Mount Surface Mount - -
Fèt tip N-Channel N-Channel - -
Seri OptiMOS™ OptiMOS™ - -
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 34 nC @ 10 V - -
Nimewo pwodwi baz BSC057 BSC054 - -
Pake / Ka 8-PowerTDFN 8-PowerTDFN - -
Founisè Aparèy pake PG-TDSON-8-5 PG-TDSON-8-5 - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 10V - -
Drenaj Sous Voltage (Vdss) 80 V 40 V - -
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 100A (Tc) 17A (Ta), 81A (Tc) - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -

BSC057N08NS3GATMA1 fich PDF

Download BSC057N08NS3GATMA1 PDF fich ak dokiman Infineon Technologies pou BSC057N08NS3GATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
PCN Lòt
Multiple Changes 09/Jul/2014.pdf
Asanble PCN/orijin
Assembly Site Update 26/Jul/2016.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

BSC057N08NS3GATMA1

Infineon Technologies
32D-BSC057N08NS3GATMA1

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