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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSC252N10NSFGATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSC252N10NSFGATMA1 - Infineon Technologies

Manifakti Nimewo Pati
BSC252N10NSFGATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSC252N10NSFGATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 7.2A/40A TDSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
BSC252N10NSFGATMA1.pdf
RoHs Status
Nan stok: 49830

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BSC252N10NSFGATMA1 Tech
Infineon Technologies - BSC252N10NSFGATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSC252N10NSFGATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 43µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TDSON-8-1  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 25.2mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 78W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1100 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7.2A (Ta), 40A (Tc)  
Nimewo pwodwi baz BSC252  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSC252N10NSFGATMA1.

Pwodwi atribi BSC252N10NSFGATMA1 BSC240N12NS3G BSC320N20NS3GATMA1 BSC22DN20NS3GATMA1
Nimewo Pati BSC252N10NSFGATMA1 BSC240N12NS3G BSC320N20NS3GATMA1 BSC22DN20NS3GATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon
Dissipasyon pouvwa (Max) 78W (Tc) 66W (Tc) 125W (Tc) -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Rds Sou (Max) @ Id, Vgs 25.2mOhm @ 20A, 10V 24mOhm @ 31A, 10V 32mOhm @ 36A, 10V -
Seri OptiMOS™ OptiMOS™ OptiMOS™ -
Vgs (th) (Max) @ Id 4V @ 43µA 4V @ 35µA 4V @ 90µA -
Kapasite Antre (Ciss) (Max) @ Vds 1100 pF @ 50 V 1900 pF @ 60 V 2350 pF @ 100 V -
Founisè Aparèy pake PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-1 -
Kouran - Kontini Drain (Id) @ 25 ° C 7.2A (Ta), 40A (Tc) 37A (Tc) 36A (Tc) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) -
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 27 nC @ 10 V 29 nC @ 10 V -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Drenaj Sous Voltage (Vdss) 100 V 120 V 200 V -
Vgs (Max) ±20V ±20V ±20V -
Nimewo pwodwi baz BSC252 - BSC320 -
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Fèt tip N-Channel N-Channel N-Channel -

BSC252N10NSFGATMA1 fich PDF

Download BSC252N10NSFGATMA1 PDF fich ak dokiman Infineon Technologies pou BSC252N10NSFGATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
PCN Lòt
Multiple Changes 09/Jul/2014.pdf
Asanble PCN/orijin
Assembly Site Update 26/Jul/2016.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

BSC252N10NSFGATMA1

Infineon Technologies
32D-BSC252N10NSFGATMA1

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