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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayBSO615CGHUMA1
BSO615CGHUMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSO615CGHUMA1 - Infineon Technologies

Manifakti Nimewo Pati
BSO615CGHUMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSO615CGHUMA1
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
BSO615C.pdf
RoHs Status
Nan stok: 4600

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BSO615CGHUMA1 Tech
Infineon Technologies - BSO615CGHUMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSO615CGHUMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2V @ 20µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-DSO-8  
Seri SIPMOS®  
Rds Sou (Max) @ Id, Vgs 110mOhm @ 3.1A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 380pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 22.5nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 60V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.1A, 2A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz BSO615  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSO615CGHUMA1.

Pwodwi atribi BSO615CGHUMA1 BSO615CGXUMA1 BSO615NGXUMA1 BSO612CVG
Nimewo Pati BSO615CGHUMA1 BSO615CGXUMA1 BSO615NGXUMA1 BSO612CVG
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Founisè Aparèy pake PG-DSO-8 PG-DSO-8 PG-DSO-8 PG-DSO-8
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Seri SIPMOS® SIPMOS® Automotive, AEC-Q101, SIPMOS® -
Pouvwa - Max 2W 2W (Ta) 2W (Ta) 2W (Ta)
Kapasite Antre (Ciss) (Max) @ Vds 380pF @ 25V 380pF @ 25V, 460pF @ 25V 380pF @ 25V 340pF, 400pF @ 25V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Standard
Kouran - Kontini Drain (Id) @ 25 ° C 3.1A, 2A 3.1A (Ta), 2A (Ta) 2.6A 3A (Ta), 2A (Ta)
Drenaj Sous Voltage (Vdss) 60V 60V 60V 60V
Pòtay Charge (Qg) (Max) @ Vgs 22.5nC @ 10V 22.5nC @ 10V, 20nC @ 10V 20nC @ 10V 15.5nC @ 10V, 16nC @ 10V
Rds Sou (Max) @ Id, Vgs 110mOhm @ 3.1A, 10V 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V 150mOhm @ 2.6A, 4.5V 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Konfigirasyon N and P-Channel N and P-Channel 2 N-Channel (Dual) -
Vgs (th) (Max) @ Id 2V @ 20µA 2V @ 20µA, 2V @ 450µA 2V @ 20µA 4V @ 20µA, 4V @ 450µA
Nimewo pwodwi baz BSO615 BSO615 BSO615 -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -

BSO615CGHUMA1 fich PDF

Download BSO615CGHUMA1 PDF fich ak dokiman Infineon Technologies pou BSO615CGHUMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
330mm Reel Pkg Chg 3/Aug/2018.pdf Dry Packing Box Update 24/Sep/2014.pdf
PCN obsolescence/ eol
Mult Dev EOL 27/Aug/2019.pdf
Asanble PCN/orijin
Mult Dev Assembly Site Chg 28/Aug/2019.pdf
Fich
BSO615C.pdf

Shipment

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BSO615CGHUMA1 Image

BSO615CGHUMA1

Infineon Technologies
32D-BSO615CGHUMA1

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