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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSS159NH6327XTSA1
BSS159NH6327XTSA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSS159NH6327XTSA1 - Infineon Technologies

Manifakti Nimewo Pati
BSS159NH6327XTSA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSS159NH6327XTSA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 230MA SOT23-3
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
BSS159N.pdf
Nan stok: 4680

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Espesifikasyon

Espesifikasyon BSS159NH6327XTSA1 Tech
Infineon Technologies - BSS159NH6327XTSA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSS159NH6327XTSA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.4V @ 26µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-SOT23  
Seri SIPMOS®  
Rds Sou (Max) @ Id, Vgs 3.5Ohm @ 160mA, 10V  
Dissipasyon pouvwa (Max) 360mW (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 44 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 2.9 nC @ 5 V  
Fèt tip N-Channel  
FET Feature Depletion Mode  
Kondwi Voltage (Max Rds sou, Min Rds sou) 0V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 230mA (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSS159NH6327XTSA1.

Pwodwi atribi BSS159NH6327XTSA1 BSS169 E6327 BSS169H6327XTSA1 BSS159NH6327XTSA2
Nimewo Pati BSS159NH6327XTSA1 BSS169 E6327 BSS169H6327XTSA1 BSS159NH6327XTSA2
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 44 pF @ 25 V 68 pF @ 25 V 68 pF @ 25 V 39 pF @ 25 V
Dissipasyon pouvwa (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Founisè Aparèy pake PG-SOT23 PG-SOT23 PG-SOT23 PG-SOT23
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 60 V 100 V 100 V 60 V
Vgs (th) (Max) @ Id 2.4V @ 26µA 1.8V @ 50µA 1.8V @ 50µA 2.4V @ 26µA
Kouran - Kontini Drain (Id) @ 25 ° C 230mA (Ta) 170mA (Ta) 170mA (Ta) 230mA (Ta)
Kondwi Voltage (Max Rds sou, Min Rds sou) 0V, 10V 0V, 10V 0V, 10V 0V, 10V
Rds Sou (Max) @ Id, Vgs 3.5Ohm @ 160mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 3.5Ohm @ 160mA, 10V
FET Feature Depletion Mode Depletion Mode Depletion Mode Depletion Mode
Pòtay Charge (Qg) (Max) @ Vgs 2.9 nC @ 5 V 2.8 nC @ 7 V 2.8 nC @ 7 V 1.4 nC @ 5 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri SIPMOS® SIPMOS® SIPMOS® SIPMOS®
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

BSS159NH6327XTSA1 fich PDF

Download BSS159NH6327XTSA1 PDF fich ak dokiman Infineon Technologies pou BSS159NH6327XTSA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Carrier Tape Update 03/Jun/2015.pdf
Fich
BSS159N.pdf
PCN obsolescence/ eol
Multiple Devices 25/Nov/2011.pdf

Shipment

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BSS159NH6327XTSA1

Infineon Technologies
32D-BSS159NH6327XTSA1

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