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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSS225H6327FTSA1
BSS225H6327FTSA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSS225H6327FTSA1 - Infineon Technologies

Manifakti Nimewo Pati
BSS225H6327FTSA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSS225H6327FTSA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 90MA SOT89
Deskripsyon detaye
Pake
TO-243AA
Done fèy
BSS225H6327FTSA1.pdf
RoHs Status
Nan stok: 119110

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon BSS225H6327FTSA1 Tech
Infineon Technologies - BSS225H6327FTSA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSS225H6327FTSA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.3V @ 94µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-SOT89  
Seri SIPMOS®  
Rds Sou (Max) @ Id, Vgs 45Ohm @ 90mA, 10V  
Dissipasyon pouvwa (Max) 1W (Ta)  
Pake / Ka TO-243AA  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 131 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 90mA (Ta)  
Nimewo pwodwi baz BSS225  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSS225H6327FTSA1.

Pwodwi atribi BSS225H6327FTSA1 BSS223PWL6327 BSS223PWH6327XTSA1 BSS225H6327
Nimewo Pati BSS225H6327FTSA1 BSS223PWL6327 BSS223PWH6327XTSA1 BSS225H6327
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Cypress Semiconductor (Infineon Technologies)
Pòtay Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V 0.62 nC @ 4.5 V 0.62 nC @ 4.5 V -
Fèt tip N-Channel P-Channel P-Channel -
Vgs (th) (Max) @ Id 2.3V @ 94µA 1.2V @ 1.5µA 1.2V @ 1.5µA -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Kapasite Antre (Ciss) (Max) @ Vds 131 pF @ 25 V 56 pF @ 15 V 56 pF @ 15 V -
FET Feature - - - -
Vgs (Max) ±20V ±12V ±12V -
Nimewo pwodwi baz BSS225 - BSS223 -
Rds Sou (Max) @ Id, Vgs 45Ohm @ 90mA, 10V 1.2Ohm @ 390mA, 4.5V 1.2Ohm @ 390mA, 4.5V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 2.5V, 4.5V 2.5V, 4.5V -
Pake / Ka TO-243AA SC-70, SOT-323 SC-70, SOT-323 -
Kouran - Kontini Drain (Id) @ 25 ° C 90mA (Ta) 390mA (Ta) 390mA (Ta) -
Founisè Aparèy pake PG-SOT89 PG-SOT323-3-3 PG-SOT323 -
Seri SIPMOS® OptiMOS® OptiMOS™ -
Dissipasyon pouvwa (Max) 1W (Ta) 250mW (Ta) 250mW (Ta) -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) -
Drenaj Sous Voltage (Vdss) 600 V 20 V 20 V -

BSS225H6327FTSA1 fich PDF

Download BSS225H6327FTSA1 PDF fich ak dokiman Infineon Technologies pou BSS225H6327FTSA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Asanble PCN/orijin
Mult Dev Site Chgs 2/Feb/2023.pdf
PCN anbalaj
Mult Dev Cover Tape Chg 9/Mar/2020.pdf Mult Dev Pkg Update 28/May/2020.pdf

Shipment

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Infineon Technologies
32D-BSS225H6327FTSA1

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