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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSZ040N06LS5ATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSZ040N06LS5ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
BSZ040N06LS5ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSZ040N06LS5ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 40A TSDSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
BSZ040N06LS5ATMA1.pdf
RoHs Status
Nan stok: 60460

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BSZ040N06LS5ATMA1 Tech
Infineon Technologies - BSZ040N06LS5ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSZ040N06LS5ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.3V @ 36µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TSDSON-8-FL  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 4mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 69W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3100 pF @ 30 V  
Pòtay Charge (Qg) (Max) @ Vgs 6.6 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature Standard  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 40A (Tc)  
Nimewo pwodwi baz BSZ040  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSZ040N06LS5ATMA1.

Pwodwi atribi BSZ040N06LS5ATMA1 BSZ040N04LSGATMA1 BSZ042N06NSATMA1 BSZ042N04NS
Nimewo Pati BSZ040N06LS5ATMA1 BSZ040N04LSGATMA1 BSZ042N06NSATMA1 BSZ042N04NS
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk
Drenaj Sous Voltage (Vdss) 60 V 40 V 60 V -
Seri OptiMOS™ OptiMOS™ OptiMOS™ *
Mounting Kalite Surface Mount Surface Mount Surface Mount -
FET Feature Standard - - -
Pòtay Charge (Qg) (Max) @ Vgs 6.6 nC @ 4.5 V 64 nC @ 10 V 27 nC @ 10 V -
Dissipasyon pouvwa (Max) 69W (Tc) 2.1W (Ta), 69W (Tc) 2.1W (Ta), 69W (Tc) -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Kouran - Kontini Drain (Id) @ 25 ° C 40A (Tc) 18A (Ta), 40A (Tc) 17A (Ta), 40A (Tc) -
Fèt tip N-Channel N-Channel N-Channel -
Founisè Aparèy pake PG-TSDSON-8-FL PG-TSDSON-8 PG-TSDSON-8-FL -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Vgs (th) (Max) @ Id 2.3V @ 36µA 2V @ 36µA 2.8V @ 36µA -
Nimewo pwodwi baz BSZ040 BSZ040 BSZ042 -
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -
Vgs (Max) ±20V ±20V ±20V -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 6V, 10V -
Kapasite Antre (Ciss) (Max) @ Vds 3100 pF @ 30 V 5100 pF @ 20 V 2000 pF @ 30 V -
Rds Sou (Max) @ Id, Vgs 4mOhm @ 20A, 10V 4mOhm @ 20A, 10V 4.2mOhm @ 20A, 10V -

BSZ040N06LS5ATMA1 fich PDF

Download BSZ040N06LS5ATMA1 PDF fich ak dokiman Infineon Technologies pou BSZ040N06LS5ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
Asanble PCN/orijin
Mult Dev Site Add 30/Oct/2020.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

BSZ040N06LS5ATMA1

Infineon Technologies
32D-BSZ040N06LS5ATMA1

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