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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSZ096N10LS5ATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSZ096N10LS5ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
BSZ096N10LS5ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSZ096N10LS5ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 40A TSDSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
BSZ096N10LS5ATMA1.pdf
RoHs Status
Nan stok: 53780

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BSZ096N10LS5ATMA1 Tech
Infineon Technologies - BSZ096N10LS5ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSZ096N10LS5ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.3V @ 36µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TSDSON-8-FL  
Seri OptiMOS™ 5  
Rds Sou (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 69W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2100 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 22 nC @ 10 V  
Fèt tip N-Channel  
FET Feature Standard  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 40A (Tc)  
Nimewo pwodwi baz BSZ096  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSZ096N10LS5ATMA1.

Pwodwi atribi BSZ096N10LS5ATMA1 BSZ099N06LS5ATMA1 BSZ0910LSATMA1 BSZ0911LSATMA1
Nimewo Pati BSZ096N10LS5ATMA1 BSZ099N06LS5ATMA1 BSZ0910LSATMA1 BSZ0911LSATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz BSZ096 BSZ099 BSZ0910 BSZ0911
Kouran - Kontini Drain (Id) @ 25 ° C 40A (Tc) 46A (Tc) 18A (Ta), 40A (Tc) 12A (Ta), 40A (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature Standard Standard - -
Vgs (Max) ±20V ±20V ±20V ±20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri OptiMOS™ 5 OptiMOS™ OptiMOS™ 5 OptiMOS™ 5
Dissipasyon pouvwa (Max) 69W (Tc) 36W (Tc) 2.1W (Ta), 37W (Tc) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Pòtay Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 3.1 nC @ 4.5 V 17 nC @ 10 V 10 nC @ 10 V
Drenaj Sous Voltage (Vdss) 100 V 60 V 30 V 30 V
Rds Sou (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V 9.9mOhm @ 20A, 10V 4.5mOhm @ 30A, 10V 7mOhm @ 20A, 10V
Founisè Aparèy pake PG-TSDSON-8-FL PG-TSDSON-8-FL PG-TDSON-8 FL PG-TDSON-8 FL
Kapasite Antre (Ciss) (Max) @ Vds 2100 pF @ 50 V 1300 pF @ 30 V 1100 pF @ 15 V 670 pF @ 15 V
Vgs (th) (Max) @ Id 2.3V @ 36µA 2.3V @ 14µA 2V @ 250µA 2V @ 250µA
Fèt tip N-Channel N-Channel N-Channel N-Channel

BSZ096N10LS5ATMA1 fich PDF

Download BSZ096N10LS5ATMA1 PDF fich ak dokiman Infineon Technologies pou BSZ096N10LS5ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
Asanble PCN/orijin
OptiMOS A/T Chgs 2/Dec/2021.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

BSZ096N10LS5ATMA1

Infineon Technologies
32D-BSZ096N10LS5ATMA1

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