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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSZ440N10NS3GATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSZ440N10NS3GATMA1 - Infineon Technologies

Manifakti Nimewo Pati
BSZ440N10NS3GATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSZ440N10NS3GATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 5.3A/18A TSDSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
BSZ440N10NS3GATMA1.pdf
RoHs Status
Nan stok: 103370

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BSZ440N10NS3GATMA1 Tech
Infineon Technologies - BSZ440N10NS3GATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSZ440N10NS3GATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.7V @ 12µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TSDSON-8  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 44mOhm @ 12A, 10V  
Dissipasyon pouvwa (Max) 29W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 640 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.3A (Ta), 18A (Tc)  
Nimewo pwodwi baz BSZ440  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSZ440N10NS3GATMA1.

Pwodwi atribi BSZ440N10NS3GATMA1 BSZ300N15NS5ATMA1 BSZ900N20NS3GATMA1 BSZ42DN25NS3
Nimewo Pati BSZ440N10NS3GATMA1 BSZ300N15NS5ATMA1 BSZ900N20NS3GATMA1 BSZ42DN25NS3
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon
Nimewo pwodwi baz BSZ440 BSZ300 BSZ900 -
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Kapasite Antre (Ciss) (Max) @ Vds 640 pF @ 50 V 950 pF @ 75 V 920 pF @ 100 V -
Drenaj Sous Voltage (Vdss) 100 V 150 V 200 V -
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Founisè Aparèy pake PG-TSDSON-8 PG-TSDSON-8-FL PG-TSDSON-8 -
Vgs (Max) ±20V ±20V ±20V -
Dissipasyon pouvwa (Max) 29W (Tc) 62.5W (Tc) 62.5W (Tc) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 8V, 10V 10V -
Fèt tip N-Channel N-Channel N-Channel -
Vgs (th) (Max) @ Id 2.7V @ 12µA 4.6V @ 32µA 4V @ 30µA -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Rds Sou (Max) @ Id, Vgs 44mOhm @ 12A, 10V 30mOhm @ 16A, 10V 90mOhm @ 7.6A, 10V -
Seri OptiMOS™ OptiMOS™ OptiMOS™ -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Kouran - Kontini Drain (Id) @ 25 ° C 5.3A (Ta), 18A (Tc) 32A (Tc) 15.2A (Tc) -
Pòtay Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V 13 nC @ 10 V 11.6 nC @ 10 V -

BSZ440N10NS3GATMA1 fich PDF

Download BSZ440N10NS3GATMA1 PDF fich ak dokiman Infineon Technologies pou BSZ440N10NS3GATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
PCN Lòt
Multiple Changes 09/Jul/2014.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

BSZ440N10NS3GATMA1

Infineon Technologies
32D-BSZ440N10NS3GATMA1

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