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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleIDV30E60C
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IDV30E60C - Infineon Technologies

Manifakti Nimewo Pati
IDV30E60C
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IDV30E60C
ECAD modèl
Pati Deskripsyon
DIODE GP 600V 21A TO220-2FP
Deskripsyon detaye
Pake
TO-220-2 Full Pack
Done fèy
IDV30E60C.pdf
Nan stok: 3940

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IDV30E60C Tech
Infineon Technologies - IDV30E60C espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IDV30E60C

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Voltage - Forward (Vf) (Max) @ Si 2.05 V @ 30 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji Standard  
Founisè Aparèy pake PG-TO220-2 Full Pack  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 130 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-2 Full Pack  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 40 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 21A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz IDV30E60  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IDV30E60C.

Pwodwi atribi IDV30E60C 1N5399-E3/73 RS1M-13-F MUR110
Nimewo Pati IDV30E60C 1N5399-E3/73 RS1M-13-F MUR110
Manifakti Infineon Technologies Vishay General Semiconductor - Diodes Division Diodes Incorporated onsemi
Tan rekiperasyon ranvèse (trr) 130 ns 2 µs 500 ns 35 ns
Operating Tanperati - Junction -55°C ~ 175°C -50°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ Si 2.05 V @ 30 A 1.4 V @ 1.5 A 1.3 V @ 1 A 875 mV @ 1 A
Vitès Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Seri - - - SWITCHMODE™
Pakèt Tube Tape & Box (TB) Tape & Reel (TR) Bulk
Kapasite @ Vr, F - 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz -
Teknoloji Standard Standard Standard Standard
Founisè Aparèy pake PG-TO220-2 Full Pack DO-204AL (DO-41) SMA Axial
Voltage - DC ranvèse (Vr) (Max) 600 V 1000 V 1000 V 100 V
Kouran - Mwayèn Rectified (Io) 21A 1.5A 1A 1A
Kouran - Reverse Leakage @ Vr 40 µA @ 600 V 5 µA @ 1000 V 5 µA @ 1000 V 2 µA @ 100 V
Pake / Ka TO-220-2 Full Pack DO-204AL, DO-41, Axial DO-214AC, SMA DO-204AL, DO-41, Axial
Mounting Kalite Through Hole Through Hole Surface Mount Through Hole
Nimewo pwodwi baz IDV30E60 1N5399 RS1M MUR11

IDV30E60C fich PDF

Download IDV30E60C PDF fich ak dokiman Infineon Technologies pou IDV30E60C - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Fich
IDV30E60C.pdf
PCN obsolescence/ eol
Multiple Devices 09/Oct/2014.pdf

Shipment

Tan livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IDV30E60C

Infineon Technologies
32D-IDV30E60C

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