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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleIGP30N65F5XKSA1
IGP30N65F5XKSA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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IGP30N65F5XKSA1 - Infineon Technologies

Manifakti Nimewo Pati
IGP30N65F5XKSA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IGP30N65F5XKSA1
ECAD modèl
Pati Deskripsyon
IGBT TRENCH 650V 55A TO220-3
Pake
TO-220-3
Done fèy
IGP30N65F5XKSA1.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 16742

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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IGP30N65F5XKSA1 Tech
Infineon Technologies - IGP30N65F5XKSA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IGP30N65F5XKSA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Voltage - Pèseptè Emitter pann (Max) 650 V  
Vce (sou) (Max) @ Vge, Ic 2.1V @ 15V, 30A  
Kondisyon tès 400V, 15A, 23Ohm, 15V  
Td (sou / sou) @ 25 ° C 19ns/170ns  
Oblije chanje enèji 280µJ (on), 70µJ (off)  
Founisè Aparèy pake PG-TO220-3  
Seri TrenchStop™  
Pouvwa - Max 188 W  
Pake / Ka TO-220-3  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati -40°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite Trench  
Gate Charge 65 nC  
Kouran - Pèseptè Pulsed (Icm) 90 A  
Kouran - Pèseptè (Ic) (Max) 55 A  
Nimewo pwodwi baz IGP30N65  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IGP30N65F5XKSA1.

Pwodwi atribi IGP30N65F5XKSA1 IGP03N120H2 IGP01N120H2 IGP50N60T
Nimewo Pati IGP30N65F5XKSA1 IGP03N120H2 IGP01N120H2 IGP50N60T
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Founisè Aparèy pake PG-TO220-3 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Nimewo pwodwi baz IGP30N65 - - -
IGBT Kalite Trench - - Trench Field Stop
Operating Tanperati -40°C ~ 175°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 175°C (TJ)
Kalite Antre Standard Standard Standard Standard
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Pouvwa - Max 188 W 62.5 W 28 W 333 W
Kouran - Pèseptè (Ic) (Max) 55 A 9.6 A 3.2 A 90 A
Oblije chanje enèji 280µJ (on), 70µJ (off) 290µJ 140µJ 1.2mJ (on), 1.4mJ (off)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Pakèt Tube Bulk Bulk Bulk
Kondisyon tès 400V, 15A, 23Ohm, 15V 800V, 3A, 82Ohm, 15V 800V, 1A, 241Ohm, 15V 400V, 50A, 7Ohm, 15V
Kouran - Pèseptè Pulsed (Icm) 90 A 9.9 A 3.5 A 150 A
Seri TrenchStop™ - - TRENCHSTOP™
Gate Charge 65 nC 22 nC 8.6 nC 310 nC
Vce (sou) (Max) @ Vge, Ic 2.1V @ 15V, 30A 2.8V @ 15V, 3A 2.8V @ 15V, 1A 2V @ 15V, 50A
Voltage - Pèseptè Emitter pann (Max) 650 V 1200 V 1200 V 600 V
Td (sou / sou) @ 25 ° C 19ns/170ns 9.2ns/281ns 13ns/370ns 26ns/299ns

IGP30N65F5XKSA1 fich PDF

Download IGP30N65F5XKSA1 PDF fich ak dokiman Infineon Technologies pou IGP30N65F5XKSA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Asanble PCN/orijin
Mult Dev Wafer Chg 7/Aug/2019.pdf

Shipment

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Sètifikasyon & Manm

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IGP30N65F5XKSA1

Infineon Technologies
32D-IGP30N65F5XKSA1

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