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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPB065N10N3GATMA1
IPB065N10N3GATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPB065N10N3GATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPB065N10N3GATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPB065N10N3GATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 80A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IPB065N10N3GATMA1.pdf
RoHs Status
Nan stok: 3880

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IPB065N10N3GATMA1 Tech
Infineon Technologies - IPB065N10N3GATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPB065N10N3GATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 90µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO263-3  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 6.5mOhm @ 80A, 10V  
Dissipasyon pouvwa (Max) 150W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4910 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc)  
Nimewo pwodwi baz IPB065  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPB065N10N3GATMA1.

Pwodwi atribi IPB065N10N3GATMA1 IPB05N03LA IPB065N15N3GATMA1 IPB065N06LG
Nimewo Pati IPB065N10N3GATMA1 IPB05N03LA IPB065N15N3GATMA1 IPB065N06LG
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc) 80A (Tc) 130A (Tc) 80A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 150W (Tc) 94W (Tc) 300W (Tc) 250W (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Rds Sou (Max) @ Id, Vgs 6.5mOhm @ 80A, 10V 4.6mOhm @ 55A, 10V 6.5mOhm @ 100A, 10V 6.2mOhm @ 80A, 10V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 4.5V, 10V 8V, 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 25 nC @ 5 V 93 nC @ 10 V 157 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 3.5V @ 90µA 2V @ 50µA 4V @ 270µA 2V @ 180µA
FET Feature - - - -
Nimewo pwodwi baz IPB065 IPB05N IPB065 -
Founisè Aparèy pake PG-TO263-3 PG-TO263-3-2 PG-TO263-7 PG-TO263-3-2
Kapasite Antre (Ciss) (Max) @ Vds 4910 pF @ 50 V 3110 pF @ 15 V 7300 pF @ 75 V 5100 pF @ 30 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk
Drenaj Sous Voltage (Vdss) 100 V 25 V 150 V 60 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri OptiMOS™ OptiMOS™ OptiMOS™ OptiMOS™

IPB065N10N3GATMA1 fich PDF

Download IPB065N10N3GATMA1 PDF fich ak dokiman Infineon Technologies pou IPB065N10N3GATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf
Asanble PCN/orijin
Mult Dev Wafer Chgs 22/Dec/2021.pdf
PCN obsolescence/ eol
Mult Dev EOL 23/Sep/2022.pdf

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Sètifikasyon & Manm

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IPB065N10N3GATMA1 Image

IPB065N10N3GATMA1

Infineon Technologies
32D-IPB065N10N3GATMA1

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