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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPB90R340C3ATMA1
IPB90R340C3ATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPB90R340C3ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPB90R340C3ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPB90R340C3ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 900V 15A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IPB90R340C3ATMA1.pdf
RoHs Status
Nan stok: 4410

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IPB90R340C3ATMA1 Tech
Infineon Technologies - IPB90R340C3ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPB90R340C3ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO263-3  
Seri CoolMOS™  
Rds Sou (Max) @ Id, Vgs 340mOhm @ 9.2A, 10V  
Dissipasyon pouvwa (Max) 208W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 94 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 900 V  
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc)  
Nimewo pwodwi baz IPB90R  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPB90R340C3ATMA1.

Pwodwi atribi IPB90R340C3ATMA1 IPB90N04S402ATMA1 IPBE65R050CFD7AATMA1 IPB90R340C3ATMA2
Nimewo Pati IPB90R340C3ATMA1 IPB90N04S402ATMA1 IPBE65R050CFD7AATMA1 IPB90R340C3ATMA2
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab), TO-263CB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature - - - -
Nimewo pwodwi baz IPB90R IPB90N04 IPBE65 IPB90R340
Founisè Aparèy pake PG-TO263-3 PG-TO263-3 PG-TO263-7-3-10 PG-TO263-3-2
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri CoolMOS™ OptiMOS™ Automotive, AEC-Q101, CoolMOS™ CFD7A CoolMOS™
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 94 nC @ 10 V 118 nC @ 10 V 102 nC @ 10 V 94 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 100 V 9430 pF @ 25 V 4975 pF @ 400 V 2400 pF @ 100 V
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc) 90A (Tc) 45A (Tc) 15A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (th) (Max) @ Id 3.5V @ 1mA 4V @ 95µA 4.5V @ 1.24mA 3.5V @ 1mA
Dissipasyon pouvwa (Max) 208W (Tc) 150W (Tc) 227W (Tc) 208W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 900 V 40 V 650 V 900 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 340mOhm @ 9.2A, 10V 2.1mOhm @ 90A, 10V 50mOhm @ 24.8A, 10V 340mOhm @ 9.2A, 10V

IPB90R340C3ATMA1 fich PDF

Download IPB90R340C3ATMA1 PDF fich ak dokiman Infineon Technologies pou IPB90R340C3ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf
PCN obsolescence/ eol
Mult Dev EOL 30/Jun/2020.pdf
Asanble PCN/orijin
Mult Dev Wafer Site/Sub Add 18/Apr/2019.pdf

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Sètifikasyon & Manm

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IPB90R340C3ATMA1

Infineon Technologies
32D-IPB90R340C3ATMA1

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