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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPC100N04S51R9ATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPC100N04S51R9ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPC100N04S51R9ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPC100N04S51R9ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 100A 8TDSON-34
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
IPC100N04S51R9ATMA1.pdf
RoHs Status
Nan stok: 55980

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPC100N04S51R9ATMA1 Tech
Infineon Technologies - IPC100N04S51R9ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPC100N04S51R9ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.4V @ 50µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TDSON-8-34  
Seri Automotive, AEC-Q101, OptiMOS™  
Rds Sou (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 100W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3770 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 65 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 7V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc)  
Nimewo pwodwi baz IPC100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPC100N04S51R9ATMA1.

Pwodwi atribi IPC100N04S51R9ATMA1 IPC100N04S5L1R9ATMA1 IPC100N04S52R8ATMA1 IPC100N04S5L1R1ATMA1
Nimewo Pati IPC100N04S51R9ATMA1 IPC100N04S5L1R9ATMA1 IPC100N04S52R8ATMA1 IPC100N04S5L1R1ATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kapasite Antre (Ciss) (Max) @ Vds 3770 pF @ 25 V 4310 pF @ 25 V 2600 pF @ 25 V 8250 pF @ 25 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 7V, 10V 4.5V, 10V 7V, 10V 4.5V, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 40 V
Founisè Aparèy pake PG-TDSON-8-34 PG-TDSON-8-34 PG-TDSON-8-34 PG-TDSON-8-34
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Dissipasyon pouvwa (Max) 100W (Tc) 100W (Tc) 75W (Tc) 150W (Tc)
Seri Automotive, AEC-Q101, OptiMOS™ OptiMOS™ OptiMOS™ Automotive, AEC-Q101, OptiMOS™
Nimewo pwodwi baz IPC100 IPC100 IPC100 IPC100
Vgs (th) (Max) @ Id 3.4V @ 50µA 2V @ 50µA 3.4V @ 30µA 2V @ 90µA
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±16V ±20V ±16V
Rds Sou (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V 1.1mOhm @ 50A, 10V
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 81 nC @ 10 V 45 nC @ 10 V 140 nC @ 10 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

IPC100N04S51R9ATMA1 fich PDF

Download IPC100N04S51R9ATMA1 PDF fich ak dokiman Infineon Technologies pou IPC100N04S51R9ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf Mult Dev Tape Chg 1/Mar/2023.pdf
Asanble PCN/orijin
IPCyyN04S5 Assembly Chgs 23/Oct/2018.pdf

Shipment

Tan livrezon

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Metòd livrezon

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Japon 4
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1.00kg-2.00kg USD $ 40.00 - USD $ 80.00
2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IPC100N04S51R9ATMA1

Infineon Technologies
32D-IPC100N04S51R9ATMA1

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