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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPD135N08N3GATMA1
IPD135N08N3GATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPD135N08N3GATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPD135N08N3GATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPD135N08N3GATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 80V 45A TO252-3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IPD135N08N3GATMA1.pdf
RoHs Status
Nan stok: 59300

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Espesifikasyon

Espesifikasyon IPD135N08N3GATMA1 Tech
Infineon Technologies - IPD135N08N3GATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPD135N08N3GATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 33µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 13.5mOhm @ 45A, 10V  
Dissipasyon pouvwa (Max) 79W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1730 pF @ 40 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 45A (Tc)  
Nimewo pwodwi baz IPD135  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPD135N08N3GATMA1.

Pwodwi atribi IPD135N08N3GATMA1 IPD135N03LG IPD12N03LB IPD13N03LA
Nimewo Pati IPD135N08N3GATMA1 IPD135N03LG IPD12N03LB IPD13N03LA
Manifakti Infineon Technologies Infineon Technologies Cypress Semiconductor (Infineon Technologies) Cypress Semiconductor (Infineon Technologies)
Mounting Kalite Surface Mount Surface Mount - -
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 10 nC @ 10 V - -
Kouran - Kontini Drain (Id) @ 25 ° C 45A (Tc) 30A (Tc) - -
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 - -
Dissipasyon pouvwa (Max) 79W (Tc) 31W (Tc) - -
Vgs (Max) ±20V ±20V - -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 4.5V, 10V - -
Fèt tip N-Channel N-Channel - -
Nimewo pwodwi baz IPD135 - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Seri OptiMOS™ CoolMOS™ - -
Kapasite Antre (Ciss) (Max) @ Vds 1730 pF @ 40 V 1000 pF @ 15 V - -
Pakèt Tape & Reel (TR) Bulk - -
Founisè Aparèy pake PG-TO252-3 PG-TO252-3-11 - -
Vgs (th) (Max) @ Id 3.5V @ 33µA 2.2V @ 250µA - -
Rds Sou (Max) @ Id, Vgs 13.5mOhm @ 45A, 10V 13.5mOhm @ 30A, 10V - -
Drenaj Sous Voltage (Vdss) 80 V 30 V - -

IPD135N08N3GATMA1 fich PDF

Download IPD135N08N3GATMA1 PDF fich ak dokiman Infineon Technologies pou IPD135N08N3GATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf
Asanble PCN/orijin
Mult Dev Wafer Chgs 22/Dec/2021.pdf

Shipment

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Sètifikasyon & Manm

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IPD135N08N3GATMA1 Image

IPD135N08N3GATMA1

Infineon Technologies
32D-IPD135N08N3GATMA1

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