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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPD50N10S3L16ATMA1
IPD50N10S3L16ATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPD50N10S3L16ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPD50N10S3L16ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPD50N10S3L16ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 50A TO252-3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IPD50N10S3L16ATMA1.pdf
RoHs Status
Nan stok: 45061

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPD50N10S3L16ATMA1 Tech
Infineon Technologies - IPD50N10S3L16ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPD50N10S3L16ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.4V @ 60µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3-11  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 15mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 100W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4180 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc)  
Nimewo pwodwi baz IPD50  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPD50N10S3L16ATMA1.

Pwodwi atribi IPD50N10S3L16ATMA1 IPD50P03P4L11ATMA1 IPD50N12S3L15ATMA1 IPD50N06S4L08ATMA2
Nimewo Pati IPD50N10S3L16ATMA1 IPD50P03P4L11ATMA1 IPD50N12S3L15ATMA1 IPD50N06S4L08ATMA2
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc) 50A (Tc) 50A (Tc) 50A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Founisè Aparèy pake PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Nimewo pwodwi baz IPD50 IPD50 IPD50 IPD50
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 55 nC @ 10 V 57 nC @ 10 V 64 nC @ 10 V
Drenaj Sous Voltage (Vdss) 100 V 30 V 120 V 60 V
FET Feature - - - -
Dissipasyon pouvwa (Max) 100W (Tc) 58W (Tc) 100W (Tc) 71W (Tc)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Fèt tip N-Channel P-Channel N-Channel N-Channel
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 4180 pF @ 25 V 3770 pF @ 25 V 7180 pF @ 25 V 4780 pF @ 25 V
Vgs (th) (Max) @ Id 2.4V @ 60µA 2V @ 85µA 2.4V @ 60µA 2.2V @ 35µA
Vgs (Max) ±20V +5V, -16V ±20V ±16V
Rds Sou (Max) @ Id, Vgs 15mOhm @ 50A, 10V 10.5mOhm @ 50A, 10V 15mOhm @ 50A, 10V 7.8mOhm @ 50A, 10V
Seri OptiMOS™ OptiMOS™ Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

IPD50N10S3L16ATMA1 fich PDF

Download IPD50N10S3L16ATMA1 PDF fich ak dokiman Infineon Technologies pou IPD50N10S3L16ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Cover Tape Width Update 17/Jun/2015.pdf Mult Dev Pkg Box Chg 3/Jan/2018.pdf
Asanble PCN/orijin
Wafer Test Add 27/Apr/2017.pdf

Shipment

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Sètifikasyon & Manm

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IPD50N10S3L16ATMA1 Image

IPD50N10S3L16ATMA1

Infineon Technologies
32D-IPD50N10S3L16ATMA1

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