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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPD50P04P413ATMA1
IPD50P04P413ATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPD50P04P413ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPD50P04P413ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPD50P04P413ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 40V 50A TO252-3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IPD50P04P413ATMA1.pdf
RoHs Status
Nan stok: 64310

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPD50P04P413ATMA1 Tech
Infineon Technologies - IPD50P04P413ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPD50P04P413ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 85µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3-313  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 12.6mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 58W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3670 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 51 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc)  
Nimewo pwodwi baz IPD50  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPD50P04P413ATMA1.

Pwodwi atribi IPD50P04P413ATMA1 IPD50P04P4L11ATMA2 IPD50P03P4L11ATMA1 IPD50P04P4L11ATMA1
Nimewo Pati IPD50P04P413ATMA1 IPD50P04P4L11ATMA2 IPD50P03P4L11ATMA1 IPD50P04P4L11ATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Fèt tip P-Channel P-Channel P-Channel P-Channel
Vgs (Max) ±20V +5V, -16V +5V, -16V ±16V
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc) 50A (Tc) 50A (Tc) 50A (Tc)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Founisè Aparèy pake PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-11 PG-TO252-3-313
Vgs (th) (Max) @ Id 4V @ 85µA 2.2V @ 85µA 2V @ 85µA 2.2V @ 85µA
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Rds Sou (Max) @ Id, Vgs 12.6mOhm @ 50A, 10V 10.6mOhm @ 50A, 10V 10.5mOhm @ 50A, 10V 10.6mOhm @ 50A, 10V
Seri OptiMOS™ OptiMOS®-P2 OptiMOS™ Automotive, OptiMOS™-P2
Kapasite Antre (Ciss) (Max) @ Vds 3670 pF @ 25 V 3900 pF @ 25 V 3770 pF @ 25 V 3900 pF @ 25 V
Dissipasyon pouvwa (Max) 58W (Tc) 58W (Tc) 58W (Tc) 58W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 59 nC @ 10 V 55 nC @ 10 V 59 nC @ 10 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 40 V 40 V 30 V 40 V
Nimewo pwodwi baz IPD50 IPD50 IPD50 IPD50

IPD50P04P413ATMA1 fich PDF

Download IPD50P04P413ATMA1 PDF fich ak dokiman Infineon Technologies pou IPD50P04P413ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf
PCN konsepsyon/spesifikasyon
Mult Dev DS Update 17/Apr/2020.pdf Mult Dev Design Chg 9/Oct/2019.pdf
Asanble PCN/orijin
Mult Dev Assembly/Status 6/Jul/2022.pdf

Shipment

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Sètifikasyon & Manm

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IPD50P04P413ATMA1 Image

IPD50P04P413ATMA1

Infineon Technologies
32D-IPD50P04P413ATMA1

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