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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPD60N10S4L12ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPD60N10S4L12ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPD60N10S4L12ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 60A TO252-3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IPD60N10S4L12ATMA1.pdf
RoHs Status
Nan stok: 32300

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IPD60N10S4L12ATMA1 Tech
Infineon Technologies - IPD60N10S4L12ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPD60N10S4L12ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.1V @ 46µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3-313  
Seri Automotive, AEC-Q101, HEXFET®  
Rds Sou (Max) @ Id, Vgs 12mOhm @ 60A, 10V  
Dissipasyon pouvwa (Max) 94W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3170 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 49 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 60A (Tc)  
Nimewo pwodwi baz IPD60N10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPD60N10S4L12ATMA1.

Pwodwi atribi IPD60N10S4L12ATMA1 IPD60R180P7ATMA1 IPD600N25N3GATMA1 IPD60R180P7SAUMA1
Nimewo Pati IPD60N10S4L12ATMA1 IPD60R180P7ATMA1 IPD600N25N3GATMA1 IPD60R180P7SAUMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Dissipasyon pouvwa (Max) 94W (Tc) 72W (Tc) 136W (Tc) 72W (Tc)
Vgs (Max) ±16V ±20V ±20V ±20V
Seri Automotive, AEC-Q101, HEXFET® CoolMOS™ P7 OptiMOS™ CoolMOS™ P7
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Founisè Aparèy pake PG-TO252-3-313 PG-TO252-3 PG-TO252-3 PG-TO252-3
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V 10V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pòtay Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 25 nC @ 10 V 29 nC @ 10 V 25 nC @ 10 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -40°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 100 V 600 V 250 V 600 V
Nimewo pwodwi baz IPD60N10 IPD60R IPD600 IPD60R
Kapasite Antre (Ciss) (Max) @ Vds 3170 pF @ 25 V 1081 pF @ 400 V 2350 pF @ 100 V 1081 pF @ 400 V
Kouran - Kontini Drain (Id) @ 25 ° C 60A (Tc) 18A (Tc) 25A (Tc) 18A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 12mOhm @ 60A, 10V 180mOhm @ 5.6A, 10V 60mOhm @ 25A, 10V 180mOhm @ 5.6A, 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (th) (Max) @ Id 2.1V @ 46µA 4V @ 280µA 4V @ 90µA 4V @ 280µA

IPD60N10S4L12ATMA1 fich PDF

Download IPD60N10S4L12ATMA1 PDF fich ak dokiman Infineon Technologies pou IPD60N10S4L12ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf
PCN obsolescence/ eol
Mult Dev Assembly Chg 4/Oct/2018.pdf

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IPD60N10S4L12ATMA1

Infineon Technologies
32D-IPD60N10S4L12ATMA1

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