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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPD70R2K0CEAUMA1
IPD70R2K0CEAUMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPD70R2K0CEAUMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPD70R2K0CEAUMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPD70R2K0CEAUMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 700V 4A TO252-3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IPD70R2K0CEAUMA1.pdf
RoHs Status
Nan stok: 5280

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon IPD70R2K0CEAUMA1 Tech
Infineon Technologies - IPD70R2K0CEAUMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPD70R2K0CEAUMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 70µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3  
Seri CoolMOS™ CE  
Rds Sou (Max) @ Id, Vgs 2Ohm @ 1A, 10V  
Dissipasyon pouvwa (Max) 42W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 163 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 700 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Tc)  
Nimewo pwodwi baz IPD70  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPD70R2K0CEAUMA1.

Pwodwi atribi IPD70R2K0CEAUMA1 IPD70R1K4P7SAUMA1 IPD70R900P7SAUMA1 IPD70P04P4L08ATMA2
Nimewo Pati IPD70R2K0CEAUMA1 IPD70R1K4P7SAUMA1 IPD70R900P7SAUMA1 IPD70P04P4L08ATMA2
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Fèt tip N-Channel N-Channel N-Channel P-Channel
Dissipasyon pouvwa (Max) 42W (Tc) 23W (Tc) 30.5W (Tc) 75W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Tc) 4A (Tc) 6A (Tc) 70A (Tc)
Drenaj Sous Voltage (Vdss) 700 V 700 V 700 V 40 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±16V ±16V +5V, -16V
Kapasite Antre (Ciss) (Max) @ Vds 163 pF @ 100 V 158 pF @ 400 V 211 pF @ 400 V 5430 pF @ 25 V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 4.5V, 10V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz IPD70 IPD70 IPD70 IPD70
Founisè Aparèy pake PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3-313
Seri CoolMOS™ CE CoolMOS™ P7 CoolMOS™ P7 OptiMOS®-P2
Rds Sou (Max) @ Id, Vgs 2Ohm @ 1A, 10V 1.4Ohm @ 700mA, 10V 900mOhm @ 1.1A, 10V 7.8mOhm @ 70A, 10V
Vgs (th) (Max) @ Id 3.5V @ 70µA 3.5V @ 40µA 3.5V @ 60µA 2.2V @ 120µA
Pòtay Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V 4.7 nC @ 10 V 6.8 nC @ 10 V 92 nC @ 10 V

IPD70R2K0CEAUMA1 fich PDF

Download IPD70R2K0CEAUMA1 PDF fich ak dokiman Infineon Technologies pou IPD70R2K0CEAUMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN obsolescence/ eol
Mult Dev EOL 8/Feb/2022.pdf
Asanble PCN/orijin
Mult Dev Site Chgs 13/Oct/2020.pdf

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IPD70R2K0CEAUMA1

Infineon Technologies
32D-IPD70R2K0CEAUMA1

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