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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPD80N04S3-06
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPD80N04S3-06 - Infineon Technologies

Manifakti Nimewo Pati
IPD80N04S3-06
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPD80N04S3-06
ECAD modèl
Pati Deskripsyon
OPTLMOS N-CHANNEL POWER MOSFET
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IPD80N04S3-06.pdf
RoHs Status
Nan stok: 4170

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPD80N04S3-06 Tech
Infineon Technologies - IPD80N04S3-06 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPD80N04S3-06

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 52µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3-11  
Seri OptiMOS®  
Rds Sou (Max) @ Id, Vgs 5.2mOhm @ 80A, 10V  
Dissipasyon pouvwa (Max) 100W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3250 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPD80N04S3-06.

Pwodwi atribi IPD80N04S3-06 IPD78CN10NG IPD80N04S306ATMA1 IPD80N06S3-09
Nimewo Pati IPD80N04S3-06 IPD78CN10NG IPD80N04S306ATMA1 IPD80N06S3-09
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 40 V 100 V 40 V 55 V
Kapasite Antre (Ciss) (Max) @ Vds 3250 pF @ 25 V 716 pF @ 50 V 3250 pF @ 25 V 6100 pF @ 25 V
Dissipasyon pouvwa (Max) 100W (Tc) 31W (Tc) 100W (Tc) 107W (Tc)
Pakèt Bulk Bulk Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake PG-TO252-3-11 PG-TO252-3-313 PG-TO252-3-11 PG-TO252-3-11
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 11 nC @ 10 V 47 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Rds Sou (Max) @ Id, Vgs 5.2mOhm @ 80A, 10V 78mOhm @ 13A, 10V 5.2mOhm @ 80A, 10V 8.4mOhm @ 40A, 10V
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (th) (Max) @ Id 4V @ 52µA 4V @ 12µA 4V @ 52µA 4V @ 55µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc) 13A (Tc) 90A (Tc) 80A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri OptiMOS® OptiMOS™ 2 OptiMOS™ OptiMOS™

Shipment

Tan livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IPD80N04S3-06

Infineon Technologies
32D-IPD80N04S3-06

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