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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPD90N04S403ATMA1
IPD90N04S403ATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPD90N04S403ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPD90N04S403ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPD90N04S403ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 90A TO252-3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IPD90N04S403ATMA1.pdf
RoHs Status
Nan stok: 42450

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPD90N04S403ATMA1 Tech
Infineon Technologies - IPD90N04S403ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPD90N04S403ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 53µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252-3-313  
Seri Automotive, AEC-Q101, OptiMOS™  
Rds Sou (Max) @ Id, Vgs 3.2mOhm @ 90A, 10V  
Dissipasyon pouvwa (Max) 94W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5260 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 66.8 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc)  
Nimewo pwodwi baz IPD90  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPD90N04S403ATMA1.

Pwodwi atribi IPD90N04S403ATMA1 IPD90N04S404ATMA1 IPD90N04S4L04ATMA1 IPD90N04S402ATMA1
Nimewo Pati IPD90N04S403ATMA1 IPD90N04S404ATMA1 IPD90N04S4L04ATMA1 IPD90N04S402ATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Vgs (Max) ±20V ±20V +20V, -16V ±20V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 94W (Tc) 71W (Tc) 71W (Tc) 150W (Tc)
Seri Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 40 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (th) (Max) @ Id 4V @ 53µA 4V @ 35.2mA 2.2V @ 35µA 4V @ 95µA
Rds Sou (Max) @ Id, Vgs 3.2mOhm @ 90A, 10V 4.1mOhm @ 90A, 10V 3.8mOhm @ 90A, 10V 2.4mOhm @ 90A, 10V
Founisè Aparèy pake PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-313
Kapasite Antre (Ciss) (Max) @ Vds 5260 pF @ 25 V 3440 pF @ 25 V 4690 pF @ 25 V 9430 pF @ 25 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 4.5V, 10V 10V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Pòtay Charge (Qg) (Max) @ Vgs 66.8 nC @ 10 V 43 nC @ 10 V 60 nC @ 10 V 118 nC @ 10 V
Nimewo pwodwi baz IPD90 IPD90 IPD90 IPD90
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc) 90A (Tc) 90A (Tc) 90A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

IPD90N04S403ATMA1 fich PDF

Download IPD90N04S403ATMA1 PDF fich ak dokiman Infineon Technologies pou IPD90N04S403ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Asanble PCN/orijin
Mult Dev Wafer Fab 12/Feb/2019.pdf
PCN anbalaj
Cover Tape Width Update 17/Jun/2015.pdf Cover Tape Width Cancellation 14/Jul/2015.pdf

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IPD90N04S403ATMA1 Image

IPD90N04S403ATMA1

Infineon Technologies
32D-IPD90N04S403ATMA1

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