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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIPG16N10S4L61AATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPG16N10S4L61AATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPG16N10S4L61AATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPG16N10S4L61AATMA1
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 100V 16A 8TDSON
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
IPG16N10S4L61AATMA1.pdf
RoHs Status
Nan stok: 79230

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPG16N10S4L61AATMA1 Tech
Infineon Technologies - IPG16N10S4L61AATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPG16N10S4L61AATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.1V @ 90µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TDSON-8-10  
Seri Automotive, AEC-Q101, OptiMOS™  
Rds Sou (Max) @ Id, Vgs 61mOhm @ 16A, 10V  
Pouvwa - Max 29W  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount, Wettable Flank  
Kapasite Antre (Ciss) (Max) @ Vds 845pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 11nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 100V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz IPG16N10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPG16N10S4L61AATMA1.

Pwodwi atribi IPG16N10S4L61AATMA1 IPG20N04S409ATMA1 IPG15N06S3L-45 IPG20N04S408ATMA1
Nimewo Pati IPG16N10S4L61AATMA1 IPG20N04S409ATMA1 IPG15N06S3L-45 IPG20N04S408ATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kapasite Antre (Ciss) (Max) @ Vds 845pF @ 25V 2250pF @ 25V 1420pF @ 25V 2940pF @ 25V
Vgs (th) (Max) @ Id 2.1V @ 90µA 4V @ 22µA 2.2V @ 10µA 4V @ 30µA
Drenaj Sous Voltage (Vdss) 100V 40V 55V 40V
Rds Sou (Max) @ Id, Vgs 61mOhm @ 16A, 10V 8.6mOhm @ 17A, 10V 45mOhm @ 10A, 10V 7.6mOhm @ 17A, 10V
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 11nC @ 10V 28nC @ 10V 20nC @ 10V 36nC @ 10V
Founisè Aparèy pake PG-TDSON-8-10 PG-TDSON-8 PG-TDSON-8-4 PG-TDSON-8-4
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount, Wettable Flank Surface Mount Surface Mount Surface Mount
Pouvwa - Max 29W 54W (Tc) 21W 65W
Kouran - Kontini Drain (Id) @ 25 ° C 16A 20A (Tc) 15A 20A
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pake / Ka 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN
Seri Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™ OptiMOS™ OptiMOS™
FET Feature Logic Level Gate - Logic Level Gate -
Nimewo pwodwi baz IPG16N10 IPG20N IPG15N IPG20N

IPG16N10S4L61AATMA1 fich PDF

Download IPG16N10S4L61AATMA1 PDF fich ak dokiman Infineon Technologies pou IPG16N10S4L61AATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
PCN obsolescence/ eol
Mult Dev Assembly Chg 4/Oct/2018.pdf

Shipment

Tan livrezon

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Metòd livrezon

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Japon 4
Mwayennorian Pèp Izrayèl la 6
DHL & FedEx Shipment Chaj Referans
Chajman chaj (kg) Referans DHL (USD $)
0.00kg-1.00kg USD $ 30.00 - USD $ 60.00
1.00kg-2.00kg USD $ 40.00 - USD $ 80.00
2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
Remak:
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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IPG16N10S4L61AATMA1

Infineon Technologies
32D-IPG16N10S4L61AATMA1

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