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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIPG20N04S4L08ATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPG20N04S4L08ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPG20N04S4L08ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPG20N04S4L08ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 40V 20A 8TDSON
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
IPG20N04S4L08ATMA1.pdf
RoHs Status
Nan stok: 64710

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IPG20N04S4L08ATMA1 Tech
Infineon Technologies - IPG20N04S4L08ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPG20N04S4L08ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.2V @ 22µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TDSON-8-4  
Seri Automotive, AEC-Q101, OptiMOS™  
Rds Sou (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V  
Pouvwa - Max 54W  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3050pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 39nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 40V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz IPG20N  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPG20N04S4L08ATMA1.

Pwodwi atribi IPG20N04S4L08ATMA1 IPG20N04S4L11AATMA1 IPG20N04S4L11ATMA1 IPG20N04S4L07ATMA1
Nimewo Pati IPG20N04S4L08ATMA1 IPG20N04S4L11AATMA1 IPG20N04S4L11ATMA1 IPG20N04S4L07ATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pake / Ka 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Seri Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 39nC @ 10V 26nC @ 10V 26nC @ 10V 50nC @ 10V
Founisè Aparèy pake PG-TDSON-8-4 PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-4
Pouvwa - Max 54W 41W 41W 65W
Vgs (th) (Max) @ Id 2.2V @ 22µA 2.2V @ 15µA 2.2V @ 15µA 2.2V @ 30µA
Nimewo pwodwi baz IPG20N IPG20N IPG20N IPG20N
Rds Sou (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V 11.6mOhm @ 17A, 10V 11.6mOhm @ 17A, 10V 7.2mOhm @ 17A, 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Kapasite Antre (Ciss) (Max) @ Vds 3050pF @ 25V 1990pF @ 25V 1990pF @ 25V 3980pF @ 25V
Drenaj Sous Voltage (Vdss) 40V 40V 40V 40V
Mounting Kalite Surface Mount Surface Mount, Wettable Flank Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Kouran - Kontini Drain (Id) @ 25 ° C 20A 20A 20A 20A
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

IPG20N04S4L08ATMA1 fich PDF

Download IPG20N04S4L08ATMA1 PDF fich ak dokiman Infineon Technologies pou IPG20N04S4L08ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Asanble PCN/orijin
Mult Dev Wafer Fab 12/Feb/2019.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf

Shipment

Tan livrezon

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Metòd livrezon

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Japon 4
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DHL & FedEx Shipment Chaj Referans
Chajman chaj (kg) Referans DHL (USD $)
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1.00kg-2.00kg USD $ 40.00 - USD $ 80.00
2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
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Sètifikasyon & Manm

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Infineon Technologies

IPG20N04S4L08ATMA1

Infineon Technologies
32D-IPG20N04S4L08ATMA1

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