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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF1010EZPBF
IRF1010EZPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF1010EZPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF1010EZPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF1010EZPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 75A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRF1010EZPBF.pdf
RoHs Status
Nan stok: 51560

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

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Espesifikasyon

Espesifikasyon IRF1010EZPBF Tech
Infineon Technologies - IRF1010EZPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF1010EZPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V  
Dissipasyon pouvwa (Max) 140W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2810 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 86 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc)  
Nimewo pwodwi baz IRF1010  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF1010EZPBF.

Pwodwi atribi IRF1010EZPBF IRF1010NPBF IRF1010EZS IRF1010EZSPBF
Nimewo Pati IRF1010EZPBF IRF1010NPBF IRF1010EZS IRF1010EZSPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 140W (Tc) 180W (Tc) 140W (Tc) 140W (Tc)
Drenaj Sous Voltage (Vdss) 60 V 55 V 60 V 60 V
Founisè Aparèy pake TO-220AB TO-220AB D2PAK D2PAK
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Nimewo pwodwi baz IRF1010 IRF1010 - -
Pòtay Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 120 nC @ 10 V 86 nC @ 10 V 86 nC @ 10 V
Pake / Ka TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakèt Tube Tube Tube Tube
Seri HEXFET® HEXFET® HEXFET® HEXFET®
FET Feature - - - -
Vgs (th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 100µA 4V @ 100µA
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V 11mOhm @ 43A, 10V 8.5mOhm @ 51A, 10V 8.5mOhm @ 51A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 2810 pF @ 25 V 3210 pF @ 25 V 2810 pF @ 25 V 2810 pF @ 25 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc) 85A (Tc) 75A (Tc) 75A (Tc)
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Vgs (Max) ±20V ±20V ±20V ±20V

IRF1010EZPBF fich PDF

Download IRF1010EZPBF PDF fich ak dokiman Infineon Technologies pou IRF1010EZPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Packing Material Update 16/Sep/2016.pdf
Asanble PCN/orijin
Mult Dev Wafer Site Chg 18/Dec/2020.pdf
PCN Lòt
Tube Pkg Qty Standardization 18/Aug/2016.pdf
PCN konsepsyon/spesifikasyon
Mult Dev No Format/Barcode Label 15/Jan/2019.pdf Mult Dev Label Chgs Aug/2020.pdf

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IRF1010EZPBF Image

IRF1010EZPBF

Infineon Technologies
32D-IRF1010EZPBF

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