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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF1104LPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF1104LPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF1104LPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF1104LPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 100A TO-262
Deskripsyon detaye
Pake
TO-262-3 Long Leads, I²Pak, TO-262AA
Done fèy
IRF1104LPBF.pdf
Nan stok: 4450

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF1104LPBF Tech
Infineon Technologies - IRF1104LPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF1104LPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-262  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 9mOhm @ 60A, 10V  
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2900 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 93 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF1104LPBF.

Pwodwi atribi IRF1104LPBF IRF1104S IRF1018ESLPBF IRF1104PBF
Nimewo Pati IRF1104LPBF IRF1104S IRF1018ESLPBF IRF1104PBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA
Founisè Aparèy pake TO-262 D2PAK TO-262 TO-220AB
Pòtay Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 93 nC @ 10 V 69 nC @ 10 V 93 nC @ 10 V
Pakèt Tube Tube Tube Tube
Rds Sou (Max) @ Id, Vgs 9mOhm @ 60A, 10V 9mOhm @ 60A, 10V 8.4mOhm @ 47A, 10V 9mOhm @ 60A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc) 100A (Tc) 79A (Tc) 100A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Through Hole Surface Mount Through Hole Through Hole
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3
Kapasite Antre (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V 2290 pF @ 50 V 2900 pF @ 25 V
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 40 V 40 V 60 V 40 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri HEXFET® HEXFET® HEXFET® HEXFET®

IRF1104LPBF fich PDF

Download IRF1104LPBF PDF fich ak dokiman Infineon Technologies pou IRF1104LPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Copper Plating Update 31/Aug/2015.pdf
PCN obsolescence/ eol
Mult Dev EOL 15/May/2016.pdf Mult Device EOL 11/May/2016.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IRF1104LPBF

Infineon Technologies
32D-IRF1104LPBF

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