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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF1324SPBF
IRF1324SPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF1324SPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF1324SPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF1324SPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 24V 195A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRF1324(L,S)PBF.pdf
Nan stok: 4250

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRF1324SPBF Tech
Infineon Technologies - IRF1324SPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF1324SPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 1.65mOhm @ 195A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 7590 pF @ 24 V  
Pòtay Charge (Qg) (Max) @ Vgs 240 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 24 V  
Kouran - Kontini Drain (Id) @ 25 ° C 195A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF1324SPBF.

Pwodwi atribi IRF1324SPBF IRF1324LPBF IRF1324S-7PPBF IRF135SA204
Nimewo Pati IRF1324SPBF IRF1324LPBF IRF1324S-7PPBF IRF135SA204
Manifakti Infineon Technologies Infineon Technologies International Rectifier Infineon Technologies
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 240 nC @ 10 V 252 nC @ 10 V 315 nC @ 10 V
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-7, D²Pak (6 Leads + Tab), TO-263CB TO-263-7, D²Pak (6 Leads + Tab) Variant
Drenaj Sous Voltage (Vdss) 24 V 24 V 24 V 135 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Pakèt Tube Tube Bulk Tape & Reel (TR)
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 7590 pF @ 24 V 7590 pF @ 24 V 7700 pF @ 19 V 11690 pF @ 50 V
Founisè Aparèy pake D2PAK TO-262 D2PAK (7-Lead) D2PAK-7
Dissipasyon pouvwa (Max) 300W (Tc) 300W (Tc) 300W (Tc) 500W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 195A (Tc) 195A (Tc) 240A (Tc) 160A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Seri HEXFET® HEXFET® HEXFET® HEXFET®, StrongIRFET™
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 1.65mOhm @ 195A, 10V 1.65mOhm @ 195A, 10V 1mOhm @ 160A, 10V 5.9mOhm @ 96A, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel

IRF1324SPBF fich PDF

Download IRF1324SPBF PDF fich ak dokiman Infineon Technologies pou IRF1324SPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf
PCN konsepsyon/spesifikasyon
Material Chg 24/Nov/2015.pdf
Fich
IRF1324(L,S)PBF.pdf

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IRF1324SPBF Image

IRF1324SPBF

Infineon Technologies
32D-IRF1324SPBF

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