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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF1405ZLPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF1405ZLPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF1405ZLPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF1405ZLPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 75A TO262
Deskripsyon detaye
Pake
TO-262-3 Long Leads, I²Pak, TO-262AA
Done fèy
IRF1405Z(S,L)PbF.pdf
RoHs Status
Nan stok: 27890

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Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF1405ZLPBF Tech
Infineon Technologies - IRF1405ZLPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF1405ZLPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-262  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 4.9mOhm @ 75A, 10V  
Dissipasyon pouvwa (Max) 230W (Tc)  
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4780 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 180 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF1405ZLPBF.

Pwodwi atribi IRF1405ZLPBF IRF1405ZSPBF IRF1405ZS IRF1405Z
Nimewo Pati IRF1405ZLPBF IRF1405ZSPBF IRF1405ZS IRF1405Z
Manifakti Infineon Technologies International Rectifier Infineon Technologies Infineon Technologies
Pòtay Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Founisè Aparèy pake TO-262 PG-TO263-3-2 D2PAK TO-220AB
Rds Sou (Max) @ Id, Vgs 4.9mOhm @ 75A, 10V 4.9mOhm @ 75A, 10V 4.9mOhm @ 75A, 10V 4.9mOhm @ 75A, 10V
Dissipasyon pouvwa (Max) 230W (Tc) 230W (Tc) 230W (Tc) 230W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pakèt Tube Bulk Tube Tube
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Through Hole Surface Mount Surface Mount Through Hole
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 4780 pF @ 25 V 4780 pF @ 25 V 4780 pF @ 25 V 4780 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - 10V 10V
Drenaj Sous Voltage (Vdss) 55 V 55 V 55 V 55 V

IRF1405ZLPBF fich PDF

Download IRF1405ZLPBF PDF fich ak dokiman Infineon Technologies pou IRF1405ZLPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf
Fich
IRF1405Z(S,L)PbF.pdf

Shipment

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Sètifikasyon & Manm

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Infineon Technologies

IRF1405ZLPBF

Infineon Technologies
32D-IRF1405ZLPBF

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