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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF1902TRPBF
IRF1902TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF1902TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF1902TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF1902TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 4.2A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF1902TRPBF.pdf
Nan stok: 3810

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Espesifikasyon

Espesifikasyon IRF1902TRPBF Tech
Infineon Technologies - IRF1902TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF1902TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 700mV @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 310 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.7V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF1902TRPBF.

Pwodwi atribi IRF1902TRPBF IRF1902GTRPBF IRF1704 IRF200P222
Nimewo Pati IRF1902TRPBF IRF1902GTRPBF IRF1704 IRF200P222
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Mounting Kalite Surface Mount Surface Mount Through Hole Through Hole
Vgs (Max) ±12V - ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.7V, 4.5V - 10V 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 20 V 20 V 40 V 200 V
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta) 4.2A (Ta) 170A (Tc) 182A (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V 7.5 nC @ 4.5 V 260 nC @ 10 V 203 nC @ 10 V
Dissipasyon pouvwa (Max) 2.5W (Ta) - 230W (Tc) 556W (Tc)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-247-3
Vgs (th) (Max) @ Id 700mV @ 250µA 700mV @ 250µA 4V @ 250µA 4V @ 270µA
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tube
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V 85mOhm @ 4A, 4.5V 4mOhm @ 100A, 10V 6.6mOhm @ 82A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 310 pF @ 15 V 310 pF @ 15 V 6950 pF @ 25 V 9820 pF @ 50 V
Seri HEXFET® HEXFET® HEXFET® StrongIRFET™
Founisè Aparèy pake 8-SO 8-SO TO-220AB TO-247AC

IRF1902TRPBF fich PDF

Download IRF1902TRPBF PDF fich ak dokiman Infineon Technologies pou IRF1902TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
Multiple Devices 19/Jun/2012.pdf

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Infineon Technologies
32D-IRF1902TRPBF

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